Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. P. Dobrego"'
Autor:
O. P. Ermolaev, V. P. Dobrego
Publikováno v:
Journal of Applied Spectroscopy. 63:137-140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2bc12697f236c70e5aeb5482b698287
https://doi.org/10.1007/bf02606641
https://doi.org/10.1007/bf02606641
Autor:
A. K. Fedotov, V. P. Dobrego
Publikováno v:
Physica Status Solidi (a). 79:K45-K48
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e5355c9bddf17e25dc48e2cb775995
https://doi.org/10.1002/pssa.2210790149
https://doi.org/10.1002/pssa.2210790149
Publikováno v:
Physica Status Solidi (a). 44:435-442
The electronic properties of Ge crystals irradiated with fast reactor neutrons are studied in the temperature range 1.7 to 300 K. Sb-, As- and Ga-doped Ge are used as original material. It is found that the activation energy of shallow radiation defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0128ec306462682d0be278575bf08700
https://doi.org/10.1002/pssa.2210440204
https://doi.org/10.1002/pssa.2210440204
Autor:
V. P. Dobrego, L. V. Govor
Publikováno v:
Soviet Physics Journal. 31:54-57
Electrical-conductivity and Hall-effect measurements have been made for germanium surface layers damaged by grinding at room temperature and at low temperature (77 and 4.2 K). A comparison is made with cleaved surfaces. There are similarities and dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f69f08113759f35b57c38e172f2d80e
https://doi.org/10.1007/bf00896687
https://doi.org/10.1007/bf00896687
Autor:
S K Evtimova, V P Dobrego
Publikováno v:
Semiconductor Science and Technology. 1:161-166
The dependence of conductivity on electric field and on temperature in heavily doped and strongly compensated liquid-phase epitaxial GaAs layers is investigated. From the dependences on temperature (in low electric fields) and electric field (in stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a718b7789514605103da95fbb007fd6
https://doi.org/10.1088/0268-1242/1/2/011
https://doi.org/10.1088/0268-1242/1/2/011
Autor:
V. P. Dobrego, Issai Shlimak
Publikováno v:
physica status solidi (b). 33:805-809
The luminescence of p-Ge doped both with Ga and As impurities in the region of “intermediate” concentrations (1016 to 1018 cm−3) has been investigated. Potential fluctuations due to random distribution of impurities in a crystal were shown to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f822a4d752c2c30f0e0acedf1f0d3e47
https://doi.org/10.1002/pssb.19690330234
https://doi.org/10.1002/pssb.19690330234
Publikováno v:
Journal of Applied Spectroscopy. 27:1616-1617
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d240c32b118af7fda7c60ca32c5bf7aa
https://doi.org/10.1007/bf00605560
https://doi.org/10.1007/bf00605560