Zobrazeno 1 - 10
of 84
pro vyhledávání: '"V. P. Derenchuk"'
Publikováno v:
EPJ Web of Conferences. 6/28/2024, Vol. 298, p1-7. 7p.
Publikováno v:
Spin 2004.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07546542775dbd65a2ccc25833725036
https://doi.org/10.1142/9789812701909_0165
https://doi.org/10.1142/9789812701909_0165
Autor:
A. S. Belov, V. P. Derenchuk
Publikováno v:
AIP Conference Proceedings.
The Cooler Injector Polarized IOn Source (CIPIOS) has most recently been used to provide polarized and unpolarized beams of negative deuterium ions for filling the injector synchrotron. More than 1.8 mA of up to 90% polarized D− was available for i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a102eb8651d5e14fda502a86b05df01a
https://doi.org/10.1063/1.1607262
https://doi.org/10.1063/1.1607262
Autor:
V. P. Derenchuk
Publikováno v:
AIP Conference Proceedings.
“The Workshop on Polarized Sources and Targets (PST 2001) was held at the Brown County Inn in Nashville, Indiana from September 30th and October 4th, 2001. It was organized by the Indiana University Cyclotron Facility in Bloomington, Indiana. The W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e8016e3bfa815773c5d55ff1db0b7d
https://doi.org/10.1063/1.1607254
https://doi.org/10.1063/1.1607254
Autor:
V. P. Derenchuk, A. S. Belov
Publikováno v:
Polarized Sources and Targets.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9a4b25d4cc9cfbbcc09a4875d1b6da
https://doi.org/10.1142/9789812777683_0034
https://doi.org/10.1142/9789812777683_0034
Publikováno v:
AIP Conference Proceedings.
A nuclear spin‐filter polarimeter is being installed in the high voltage terminal of HIPIOS at the Indiana University Cyclotron Facility. It will be used to measure the polarization of protons and deuterons at a source extraction energy of 10 keV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e131eadc568b820170dcacad84a6ee38
https://doi.org/10.1063/1.48847
https://doi.org/10.1063/1.48847
Autor:
del Moral, Octavio G.1, Magán, Miguel1, Sordo, Fernando1, Villacorta, Félix J.1 fjimenez@essbilbao.org, Pérez, Mario1
Publikováno v:
EPJ Web of Conferences. 10/9/2023, Vol. 286, p1-6. 6p.
Autor:
B. von Przewoski, D. V. Baxter, A. Bogdanov, S. Clark, V. P. Derenchuk, T. Ellis, C.M. Lavelle, M.B. Leuschner, N. Remmes, T. Rinckel, P.E. Sokol, T. Turflinger
Publikováno v:
2006 IEEE Radiation Effects Data Workshop; 2006, p188-190, 3p
Publikováno v:
Spectroscopy Letters. 17:165-180
The surface of a P type Si wafer was bombarded with 14N2 + and H2 + and the Raman spectrum of the implanted surface was obtained. The recorded spectrum not only confirms the information of various silicon-nitrogen, silicon-hydrogen, silicon-hydrogen-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7c08ee30242c5e26a407170565d540
https://doi.org/10.1080/00387018408062676
https://doi.org/10.1080/00387018408062676
Publikováno v:
Canadian Journal of Physics. 62:201-206
The surface of a P-type Si wafer was bombarded with [Formula: see text] and then [Formula: see text], and the Raman spectrum of the implanted surface was obtained. The recorded Raman spectrum not only confirms the formation of various silicon–oxyge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95574ee9dec057ce6ae37347a3d8bcf5
https://doi.org/10.1139/p84-032
https://doi.org/10.1139/p84-032