Výsledky vyhledávání - "V. P. Chehun"

Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO/sub 2/-Si at the gas adsorption

Autor: V. V. Il’chenko, V. T. Grinchenko, V. P. Chehun, V.V. Telega, A. M. Gaskov, A. I. Kravchenko

Publikováno v: Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498).

The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2713ef8059da7410c8f717436c141214
https://doi.org/10.1109/icsens.2003.1278914

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Frequency Changes in the Second Derivative of Currant — Voltage Characteristics of SnO2-Si the Heterostructures During Gas Adsorption for Different Thickness of the Adsorptive Layers

Autor: A. M. Gaskov, V. T. Grinchenko, V. M. Telega, A. I. Kravchenko, V. V. Il’chenko, V. P. Chehun, L. G. Il’chenko

Publikováno v: MicroNano Integration ISBN: 9783642622656

Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the he

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d180b68940cc716dc63a02b2918dcf68
https://doi.org/10.1007/978-3-642-18727-8_12

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