Zobrazeno 1 - 10
of 223
pro vyhledávání: '"V. P. Bondarenko"'
Publikováno v:
Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika, Vol 67, Iss 3, Pp 193-208 (2024)
This work experimentally and theoretically analyzes the dynamics of the process of ion emission from a capillary emitter filled with an ionic liquid as a working fluid. Such emitters can be used in the energy system of low-mass satellites as a source
Externí odkaz:
https://doaj.org/article/4f5a63b1497b4561b4b214bb28ff0383
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 6, Pp 14-21 (2022)
Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers
Externí odkaz:
https://doaj.org/article/f0247491450c4da88be010a9900a4a1c
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 3, Pp 5-12 (2022)
Films of cobalt oxide and nickel oxide on monocrystalline silicon substrates were obtained by electrochemical deposition from aqueous electrolyte solutions. Their structure and composition were studied by Raman microscopy and scanning electron micros
Externí odkaz:
https://doaj.org/article/ad2d954e38bd4c5ca9c6325405b17194
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 4, Pp 53-61 (2022)
The possibility of pyrolytic synthesis of composite heterosystems based on macroporous silicon, graphitic carbon nitride and wide band semiconductors zinc oxide and zinc sulfide (g-C3N4/ZnO/ZnS) from a mechanical mixture of thiourea and zinc acetate
Externí odkaz:
https://doaj.org/article/93baf27030754d89a4eb24b5034f2683
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 5, Pp 17-25 (2020)
Structures based on ZnO and Cu, which are a polycrystalline composite consisting of crystalline ZnO with a crystallographic orientation of (002) and (101) doped with Cu and crystalline metallic Cu, were obtained by electrochemical deposition on subst
Externí odkaz:
https://doaj.org/article/77c5ad236e57455da791b44d524a87fd
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 2, Pp 37-44 (2020)
This paper is targeted at studying the patterns of deposition by electrochemical method of Ni-doped ZnO films, including registering and analyzing their photoluminescence and Raman scattering spectra. We have studied the electrochemical deposition of
Externí odkaz:
https://doaj.org/article/2dd138344b2a47308a235496ad966f9e
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 59-66 (2020)
The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that
Externí odkaz:
https://doaj.org/article/36f1caca2f9b4d0684640fbc9309b7a2
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 31-37 (2019)
Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density
Externí odkaz:
https://doaj.org/article/f57ed8ab0de04d67bce82e4b70b5a54e
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 3, Pp 11-17 (2019)
The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that por
Externí odkaz:
https://doaj.org/article/908ff34480004edb9dc253a076eb443d
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 28-34 (2019)
Properties and deposition of continuous thin zinc oxide films by chemical on the monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are studied. Obtained hybrid zinc oxide structures consist of vertically
Externí odkaz:
https://doaj.org/article/8bfda3f7900541c286ea6fa3e535f142