Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V. P. Astakhov"'
Publikováno v:
Тонкие химические технологии, Vol 10, Iss 5, Pp 13-18 (2015)
The elemental and chemical composition distribution over the indium arsenide anodic oxide films (AOF) thickness created by anodic oxidation in a galvanostatic mode at two current density values in an electrolyte containing fluoride ions are studied b
Externí odkaz:
https://doaj.org/article/1cc7fb81c4984f559c0e0291fddde3c8
Publikováno v:
Тонкие химические технологии, Vol 7, Iss 3, Pp 46-50 (2012)
The effect of Be-implanted InSb layers annealing by pulsed halogen lamps radiation on the thermo-emf was investigated. The features of the stagewise annealing influence, as well as the optimal temperature and duration of each stage were studied. The
Externí odkaz:
https://doaj.org/article/9f48605a283745378133298c30e57cb0
Publikováno v:
Zaporožskij Medicinskij Žurnal, Vol 22, Iss 5, Pp 701-708 (2020)
The aim of the work is to study and analyze the clinical and psychological aspects of pregnancy and features of the course of labor in women with different types of psychological component of gestational dominant (PCGD). Materials and methods. The
Externí odkaz:
https://doaj.org/article/bc4028d0ea124880bb80a57323aaca87
Autor:
V. P. Astakhov, I. N. Miroshnikova, P. V. Mitasov, P. D. Gindin, I. B. Warlashov, A. V. Artamonov, N. I. Evstafieva
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:129-133
Dynamics of changes in fluorine atoms distribution through grown anodic oxide layer thickness and the effective surface charge on InAs crystals under such layers has been studied. Anodic oxidation was performed in alkaline electrolyte with fluorochem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6bc277bed40117d33c1eaba57a3d27a
https://doi.org/10.17073/1609-3577-2017-2-129-133
https://doi.org/10.17073/1609-3577-2017-2-129-133
Autor:
I. B. Warlashov, V. P. Astakhov, I. N. Miroshnikova, N. I. Evstafieva, P. D. Gindin, A. V. Artamonov, P. V. Mitasov
Publikováno v:
Russian Microelectronics. 47:624-627
The dynamics of fluorine atoms distribution over the thickness of the grown anodic oxide layers and the effective surface charge on InAs crystals under these layers are investigated. Anodic oxidation is performed in an alkaline electrolyte to which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deafe61ea7ab2780a0865bfc13cdb82b
https://doi.org/10.1134/s1063739718080036
https://doi.org/10.1134/s1063739718080036
Publikováno v:
Discrete Dynamics in Nature and Society, Vol 4, Iss 3, Pp 231-243 (2000)
The paper describes the sequence of bifurcations leading to multistability of periodic and chaotic synchronous attractors for the coupled Rössler systems which individually demonstrate the Feigenbaum route to chaos. We investigate how a frequency mi
Externí odkaz:
https://doaj.org/article/350f02e6251e46cfb45be8780be44eb4
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:255-260
The fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal–insulator–semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03dd09ef563ba07c113227110e913c8
https://doi.org/10.1134/s1027451018020039
https://doi.org/10.1134/s1027451018020039
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:43-47
The results of the second-photon-stimulated annealing of beryllium-implanted InAs layers are presented. The hole and electron concentrations and the activation energy of second-photon-stimulated annealing are calculated for the characteristic tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35b86d7f87e581f8aa86c2d247e5da0e
https://doi.org/10.1134/s1027451016010079
https://doi.org/10.1134/s1027451016010079
Publikováno v:
Measurement Techniques. 54:712-715
Typical noise power density spectra of photoreceivers, manufactured using different industrial technologies are presented. Technologies which reduce the 1/F α noise are considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a74c5d3041ee386fe0e1120fd0c1b7ea
https://doi.org/10.1007/s11018-011-9792-y
https://doi.org/10.1007/s11018-011-9792-y
Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:358-361
A four-point probe method was used to study, as the layers were removed consecutively, the concentration distribution profiles of free electrons in high-resistivity p-Si with implanted P+ and Na+ ions. Anodic oxidation was used to remove layers at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4794d9e591c02f179c6d9eb0fd290e15
https://doi.org/10.1134/s1027451011040100
https://doi.org/10.1134/s1027451011040100