Zobrazeno 1 - 10
of 30
pro vyhledávání: '"V. P. Chalyi"'
Publikováno v:
Measurement Techniques. 60:403-410
The results of international pilot comparisons in the field of measurements of ultrasonic power in water are analyzed. The comparisons were made on the state primary standards of the Russian Federation (VNIIFTRI) and Ukraine (DP NDI Sistema) in 2014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d835e8bc70d2551f90dc4b98fd2c54
https://doi.org/10.1007/s11018-017-1210-7
https://doi.org/10.1007/s11018-017-1210-7
Publikováno v:
Russian Microelectronics. 41:400-404
Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd976a1d929ec55105e61a2c487ef83e
https://doi.org/10.1134/s1063739712070153
https://doi.org/10.1134/s1063739712070153
Publikováno v:
Technical Physics. 54:159-164
The existence of a bound state of a proton and a heavy atom is predicted. The atom is described by the Thomas-Fermi method. The electrons screen the field of the proton, which suppresses the repulsive force between the proton and the atomic nucleus.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52918863f9df955a63b9d011a9237d8f
https://doi.org/10.1134/s1063784209020017
https://doi.org/10.1134/s1063784209020017
Autor:
S. I. Petrov, V. P. Chalyi, A. É. Byrnaz, D. M. Krasovitsky, Yu.V. Pogorelsky, M. V. Stepanov, A. P. Shkurko, M. A. Sokolov, I. A. Sokolov, M. V. Pavlenko, A. N. Alekseev
Publikováno v:
Semiconductors. 41:1005-1010
The effect of growth conditions (V/III ratio, substrate temperature) on the properties of materials in AlN-GaN systems is discussed. A concept of the growth of the AlN/AlGaN/GaN multilayer heterostructure, which provides the improvement of crystal qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d6153765cfdfc0e97174143f4897e3
https://doi.org/10.1134/s1063782607090011
https://doi.org/10.1134/s1063782607090011
Publikováno v:
Measurement Techniques. 48:438-444
It is proposed using numerical methods to estimate the accuracy characteristics of complicated functions such as those of the primary acoustic standard. Two methods are considered: a numerical method, in which the component of the uncertainty (or err
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2522189c97b910b5767561ed8224e95
https://doi.org/10.1007/s11018-005-0161-6
https://doi.org/10.1007/s11018-005-0161-6
Autor:
S. B. Aleksandrov, Yu. A. Matveev, D. M. Krasovitskii, D. A. Baranov, M. V. Pavlenko, M. V. Stepanov, I. A. Sokolov, Yu. V. Pogorel’skii, V. P. Chalyi, A. P. Kaidash, N. B. Gladysheva, A. A. Chernyavskii, S. I. Petrov, A. A. Dorofeev
Publikováno v:
Semiconductors. 38:1235-1239
A concept for the design of experimental AlGaN/GaN/AlGaN double heterostructures with a two-dimensional electron channel are discussed, together with their main properties. The structures were formed by ammonia molecular-beam epitaxy on sapphire subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee3bacc526bd77d64e71753d7b74ebc
https://doi.org/10.1134/1.1808836
https://doi.org/10.1134/1.1808836
Autor:
D. M. Krasovitskii, A. P. Shkurko, V. P. Chalyi, M. V. Stepanov, A. P. Kaidash, M. V. Pavlenko, I. A. Sokolov, Yu. V. Pogorel’skii, S. I. Petrov, D. A. Baranov
Publikováno v:
Technical Physics Letters. 30:580-582
InGaN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) using ammonia as a source of nitrogen. The influence of the growth temperature and rate on the incorporation of indium into the epitaxial layers and the position of the corres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8c5811c5ccf0fefa04b0b9a7ac0099
https://doi.org/10.1134/1.1783408
https://doi.org/10.1134/1.1783408
Autor:
M. V. Stepanov, Yu. S. Kuz’michev, V. P. Chalyi, I. A. Sokolov, D. A. Baranov, S. I. Petrov, S. A. Lermontov, V. V. Volkov, A. P. Kaidash, M. A. Sokolov, V. P. Ivanova, D. M. Krasovitskii, Yu. V. Solov’ev, Yu. V. Pogorel’skii, M. V. Pavlenko
Publikováno v:
Technical Physics Letters. 30:380-382
The experimental technology and characteristics of domestic AlGaN/GaN high electron mobility transistors are described. The results show good prospects for further development.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd320671a1c4e630e3faa802f435af10
https://doi.org/10.1134/1.1760861
https://doi.org/10.1134/1.1760861
Publikováno v:
Quantum Electronics. 28:768-770
Powerful laser diodes, representing partly phase-locked laser arrays based on quantum-well heterostructures, were developed. The high temporal and spatial stability, and the long service life of such laser diodes make them suitable for optical pumpin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::085a5f55ce3abb1aa53f8b6a2586862a
https://doi.org/10.1070/qe1998v028n09abeh001322
https://doi.org/10.1070/qe1998v028n09abeh001322
Autor:
R. V. Leus, V. P. Chalyi, A. N. Ivkin, D. M. Demidov, N. I. Katsavets, A. L. Ter-Martirosyan, S. V. Kokin
Publikováno v:
Technical Physics Letters. 27:58-59
High-power diode laser bars (DLBs) based on InGaAlAs quantum-confinement heterostructures with an output optical power of no less than 100 W in a quasi-continuous wave regime (pulse duration, 200–400 μs; repetition rate, 50–100 Hz) were fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05954dc418e36cdc2c670bc45f715f82
https://doi.org/10.1134/1.1345166
https://doi.org/10.1134/1.1345166