Zobrazeno 1 - 10
of 29
pro vyhledávání: '"V. Orsi Gordo"'
Autor:
A.R.H. Carvalho, V. Orsi Gordo, Janne Puustinen, Mircea Guina, Y. Galvão Gobato, H. V. A. Galeti, M. A. G. Balanta, H. Alghamdi, Mohamed Henini
Publikováno v:
Journal of Luminescence. 182:49-52
We have investigated polarization resolved photoluminescence (PL) of GaAs 1−x Bi x /GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x 1−x Bi x /GaAs QWs increase with the increase of Bi concentration. Excitonic g ex
Autor:
J. Araújo e Nobrega, M. J. S. P. Brasil, Mohamed Henini, Y. Galvão Gobato, H. V. A. Galeti, V. Orsi Gordo, Milan Orlita, D. Taylor
Publikováno v:
Superlattices and Microstructures. 88:574-581
In this work, we have investigated transport and optical properties of n-i-n resonant tunneling diodes (RTDs) containing a layer of InAs self-assembled quantum dots (QDs) grown on a (311)B oriented GaAs substrate. Polarization-resolved photoluminesce
Autor:
Fernando Iikawa, Daniel W. Hewak, F.S. Covre, M. A. G. Balanta, Fanyao Qu, Chung-Che Huang, V. Orsi Gordo, Y. Galvão Gobato, H. V. A. Galeti, O. D. D. Couto, Mohamed Henini
Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9e9c6ced5368602e8c3fc9a92c291ac
https://eprints.soton.ac.uk/418197/
https://eprints.soton.ac.uk/418197/
Autor:
V, Orsi Gordo, M A G, Balanta, Y, Galvão Gobato, F S, Covre, H V A, Galeti, F, Iikawa, O D D, Couto, F, Qu, M, Henini, D W, Hewak, C C, Huang
Publikováno v:
Nanoscale. 10(10)
Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand
Autor:
A. Alkaoud, Mohamed Henini, H. V. Avanço Galeti, Houcine Bouzid, O.M. Lemine, V. Orsi Gordo, Y. Galvão Gobato, A. Hajry
Publikováno v:
Superlattices and Microstructures. 65:48-55
The effects of long time thermal annealing at 200 °C on the optical and structural properties of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission
Autor:
Mustafa Akyol, Y. Galvão Gobato, G Som, Joonas Hilska, H. V. A. Galeti, Mohamed Henini, Ariano De Giovanni Rodrigues, H. Alghamdi, Mircea Guina, Janne Puustinen, Mustafa Gunes, V. Orsi Gordo, Gabriela Augusta Prando, Sergio Souto
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
In this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Ram
Autor:
V. Orsi Gordo, Mohamed Henini, Nurdogan Can, Mehmet Ayvacıklı, A. Canimoglu, Y. Galvão Gobato, Y. Tuncer Arslanli
WOS: 000353853100011
Novel stannate phosphor, orthorhombic CaSnO3 phosphors doped with Er3+, Nd3+ and Sm3+ have been synthesized by a conventional solid-state method under N2+H-2 gas flow. Visible and near-infrared photoluminescence (PL) propert
Novel stannate phosphor, orthorhombic CaSnO3 phosphors doped with Er3+, Nd3+ and Sm3+ have been synthesized by a conventional solid-state method under N2+H-2 gas flow. Visible and near-infrared photoluminescence (PL) propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf05045b09fe44088a5df0f7e576d87d
https://hdl.handle.net/11480/3946
https://hdl.handle.net/11480/3946
Autor:
Y. Galvão Gobato, L. K. S. Herval, H. V. A. Galeti, D. Taylor, V. Orsi Gordo, Mohamed Henini, M. J. S. P. Brasil
Publikováno v:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).
In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. T
Optical and spin properties of localized and free excitons in GaBixAs1−x/GaAs multiple quantum wells
Autor:
Faebian Bastiman, Robert D. Richards, Ariano De Giovanni Rodrigues, V. Orsi Gordo, B H B Santos, John P. R. David, J. Kopaczek, M. A. G. Balanta, Robert Kudrawiec, Y. Galvão Gobato, H. V. A. Galeti
Publikováno v:
Journal of Physics D: Applied Physics. 49:355104
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observe
Autor:
M. P. F. de Godoy, Mahdad Sadeghi, D. F. Cesar, A. Khatab, Martin Schmidbauer, V. Lopes-Oliveira, Y. Galvão Gobato, L. K. S. Herval, V. Orsi Gordo, Shumin Wang, Mohamed Henini
Publikováno v:
Journal of Applied Physics. 116:233703
We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III–V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL mea