Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. O. Zozulia"'
Publikováno v:
34. :19-28
Background. The unique spectral position of terahertz range determines the difficulties of developing compact solid-state sources of terahertz radiation. In most cases, the operating frequencies of existing devices are displaced in the terahertz part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5db8be854ea778c4bea101b31f7a20c
https://doi.org/10.26565/2311-0872-2021-34-03
https://doi.org/10.26565/2311-0872-2021-34-03
Autor:
O. V. Botsula, V. O. Zozulia
Publikováno v:
2020 IEEE Microwave Theory and Techniques in Wireless Communications (MTTW).
THz and sub-THz radiation is useful in the radio astronomy field, medical visualization, surveillance etc. A novel two-terminal device is offered. It represents a diode containing active lateral border. The operation principle of the diode is usage o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5069aed2dc04a122efd34c415b944ccd
https://doi.org/10.1109/mttw51045.2020.9245041
https://doi.org/10.1109/mttw51045.2020.9245041
Autor:
V. O. Zozulia, O. V. Botsula
Діоди з резонансно-тунельною границею розглядаються як можливі джерела терагерцового діапазону. Діоди є планарними структурами з двом
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62360797e5df3dd8c5dbc30b2bc7c908
https://essuir.sumdu.edu.ua/handle/123456789/81234
https://essuir.sumdu.edu.ua/handle/123456789/81234
Publikováno v:
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON).
Diodes with lateral $n^{+}-n$-border have been proposed as wide-band and high frequency active elements in long part of the terahertz range. They represent planar two-terminal $n^{+}-n-n^{+}-$GaAs-based structures containing a lateral active border a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27f638217fa7b3883f39b75cdc4471d
https://doi.org/10.1109/ukrcon.2019.8879884
https://doi.org/10.1109/ukrcon.2019.8879884
Publikováno v:
2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS).
Diodes with resonant tunneling border (RTB) are studied as possible high speed and wide-band devices. The diodes represent planar two-terminal n+-n-n+-GaAs-based structures containing the lateral active border as a AlGaAs/GaAs double barrier resonant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee3a1a824d161eae335e9eaaf11e731
https://doi.org/10.1109/uwbusis.2018.8520067
https://doi.org/10.1109/uwbusis.2018.8520067
Publikováno v:
2017 IEEE International Young Scientists Forum on Applied Physics and Engineering (YSF).
The short length and graded gap of InGaAs-based diodes with impact ionization are considered. Diode peculiarity is defined by usage region with varying composition. The analysis of diodes operation is performed by Monte Carlo technique. Influence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba73b2f03aeda4ddf83b71deb87d41af
https://doi.org/10.1109/ysf.2017.8126637
https://doi.org/10.1109/ysf.2017.8126637