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Extremely high frequency Schottky diodes based on single GaN nanowires

Autor: K Yu Shugurov, A M Mozharov, V V Fedorov, S A Blokhin, V V Neplokh, I S Mukhin

Publikováno v: Nanotechnology. 34:245204

Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fa1ccbf7ec36d3054f9cf4a1504bfab
https://doi.org/10.1088/1361-6528/acc4cb

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Elastic single-walled carbon nanotubes pixel matrix electrodes for flexible optoelectronics

Autor: S. Mukhangali, V. Neplokh, F. Kochetkov, A. Vorobyev, D. Mitin, M. Mukhin, D. K. Krasnikov, J. Tian, R. Islamova, A. G. Nasibulin, I. Mukhin

Publikováno v: Applied Physics Letters. 121:243504

This paper demonstrates an elastic (i.e., both flexible and stretchable) pixel matrix based on the patterned films of single-walled carbon nanotubes, which were obtained using optical lithography and plasma etching. The proposed elastic electrodes ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6faa01bda52c6109eaf86e836930656
https://doi.org/10.1063/5.0125974

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Study of nonlinear optical phenomena in silicon nanowires

Autor: V A Mastalieva, V Neplokh, A I Morozov, A A Nikolaeva, A S Gudovskikh, I S Mukhin, S V Makarov

Publikováno v: Journal of Physics: Conference Series. 2086:012023

This work studies generation of second and third harmonics in arrays of vertically oriented silicon nanowires (SiNWs) encapsulated into a silicone membrane and separated from the growth substrate. The structures were produced by plasma-chemical etchi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ce3c0efd427924871a3fb630d69851e
https://doi.org/10.1088/1742-6596/2086/1/012023

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Processing and characterization of GaP nanowires encapsulated into a PDMS large-scale membrane for flexible optoelectronics

Autor: S M Mukhangali, V Neplokh, F M Kochetkov, V V Fedorov, A G Nasibulin, S V Makarov, R M Islamova, I S Mukhin

Publikováno v: Journal of Physics: Conference Series. 2086:012093

This paper presents the methods of fabricating arrays of semiconductor III-V nanowires transferred into a flexible polydimethylsiloxane membrane. Molecular beam epitaxy was used to synthesize GaP nanowires. The synthesized nanowire arrays were encaps

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92715c0e2414d8a215dabf112ded1fc2
https://doi.org/10.1088/1742-6596/2086/1/012093

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Encapsulation of Recrystallized Inorganic Perovskite Quantum Dots in Nonwoven Fluoropolymer Fibers

Autor: M Baeva, V Neplokh, D I Markina, A M Pavlov, D A Kirilenko, I S Mukhin, A P Pushkarev, S V Makarov, A A Serdobintsev

Publikováno v: Journal of Physics: Conference Series. 2086:012131

Since emerging Metal Halide Perovskites were attracting elevated attention from scientific and industrial communities. Although, we still yet to see commercial products based on perovskite materials a significant body of work has been already done. H

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89712675c840d07362c01c5c9586ade4
https://doi.org/10.1088/1742-6596/2086/1/012131

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Study of nonlinear optical phenomena in silicone films encapsulated with SiO2 and Si/SiO2 spherical particles

Autor: V Mastalieva, A Nikolaeva, V Neplokh, D Eurov, S Makarov, D Kurdyukov, E Stovpiaga, V Golubev, I Mukhin

Publikováno v: Journal of Physics: Conference Series. 2103:012119

Infrared converters to visible range are in demand for creation of optoelectronic devices, infrared visualizers and other non-linear optical devices. In this work we study nonlinear optical properties of monodisperse SiO2 and Si/SiO2 spheres encapsul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68ebdaf0e0c8e6ffdc2b4cff21dd5dea
https://doi.org/10.1088/1742-6596/2103/1/012119

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Light-emitting p-i-n GaP/GaPAs NW encapsulated in a flexible PDMS membrane

Autor: S M Mukhangali, V Neplokh, F M Kochetkov, E I Moiseev, A S Miroshnichenko, K B Deriabin, A G Nasibulin, R M Islamova, I S Mukhin

Publikováno v: Journal of Physics: Conference Series. 2103:012178

Our work is aimed at the method of fabricating arrays of semiconductor III-V NWs transferred into a flexible polymer membrane made of polydimethylsiloxane. GaP/GaPAs NWs with an axial p-i-n structure were synthesized by molecular beam epitaxy. The sy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cfbef84f48e599363696f8fd781a706d
https://doi.org/10.1088/1742-6596/2103/1/012178

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Akademický článek

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