Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V. N. Vodop'yanov"'
Publikováno v:
Технология и конструирование в электронной аппаратуре. :3-8
The n-InSe nanocomposite material was obtained by the method of intercalation of the InSe layered single crystal from a melt of RbNO3 ferroelectric salt, which can be used for the production of a high-specific capacitance photoconductor. X-ray analys
Publikováno v:
Russian Physics Journal. 57:642-656
Impedance spectra of GaSe composite nanostructures are investigated in the dark and under their light illumination. It is established that the processes of accumulation and transfer of charge carriers in these structures are determined by the strain-
Publikováno v:
Sensor Letters. 11:1549-1554
Publikováno v:
Physics of the Solid State. 55:181-195
The morphology of PbTe and SnTe nanostructures grown on BaF2(111) substrates from the vapor phase in a vacuum under conditions close to the thermodynamic equilibrium has been investigated using atomic force microscopy. The equilibrium shape of PbTe a
Publikováno v:
Semiconductors. 46:342-353
Features of the formation of Au/Ni/〈C〉/n-Ga2O3 hybrid nanostructures on a Van der Waals surface (0001) of “layered semiconductor-ferroelectric” composite nanostructures (p-GaSe〈KNO3〉) are studied using atomic-force microscopy. The room-te
Publikováno v:
Semiconductors. 45:338-349
The current-voltage characteristics and frequency dependences of the impedance of composite nanostructures fabricated on the basis of layered anisotropic semiconductor p-GaSe and ferroelectric KNO3 are studied. Multilayer nanostructures were obtained
Publikováno v:
Semiconductors. 44:171-183
Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the “metal-layered semiconductor” interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current–voltage and capacitance–volt
Publikováno v:
Technical Physics Letters. 33:86-90
The formation of nanodimensional defects on the van der Waals (0001) surface of a gallium selenide (GaSe) layered crystal and the growth of lead telluride (PbTe) and tin telluride (SnTe) nanostructures by deposition on this surface from the vapor pha
Autor:
Vitalii Sichkovskyi, Witold Dobrowolski, E.I. Slynko, R. Yakiela, V. N. Vodop’yanov, G. V. Lashkarev, A. P. Bakhtinov, M. V. Radchenko
Publikováno v:
Physics of the Solid State. 48:1342-1345
The temperature dependence of the thermopower of Pb1−x GexTe (x = 0.01−0.05) epitaxial films grown on BaF2(111) substrates was measured. The temperature of the ferroelectric phase transition was found to disagree with that obtained for bulk singl
Publikováno v:
Technical Physics Letters. 32:167-170
The nucleation and growth of three-dimensional lead telluride (PbTe) nanoislands from vapor phase on BaF2(111) substrates strained by an external load under conditions close to thermodynamic equilibrium have been studied. Evolution of the shape of na