Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. N. Vasantha Kumar"'
Autor:
Mahadeva Iyer Natarajan, Manjunatha Prabhu, Li Zhiqing, V. N. Vasantha Kumar, Dominic Thurmer, Jian-Hsing Lee, Tsung-Che Tsai, R.K. Jain
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
Correlation between TLP and HBM test results at product level and/or complex ESD circuit is not feasible. In product level HBM testing there can be stress condition which is worse at low current compared to high ESD current. Such results cannot be re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae74dd0afc55afb8063d5d8b01e5078d
https://doi.org/10.1109/eosesd.2015.7314743
https://doi.org/10.1109/eosesd.2015.7314743
Autor:
Shao-Ming Yang, Ankit Kumar, V. N. Vasantha Kumar, Aryadeep Mrinal, Vivek Ningaraju, Emita Yulia Hapsari, Gene Sheu
Publikováno v:
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC).
In this work, a single RESURF P-top layer with STI-sided N-LDMOS device is developed to realize a breakdown voltage of 20V-60V with lowest on-resistance and good charge balance which is demonstrated by using three-dimensional Sentaurus process and de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000698930bd59a0d8a5578cc9803c9fe
https://doi.org/10.1109/nmdc.2013.6707459
https://doi.org/10.1109/nmdc.2013.6707459
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
This paper presents a low cost innovative dual channel engineering to simulate the effects of arsenic and antimony implantation over breakdown voltage and on state resistance of an Ultra High Voltage (UHV) device. There are many devices in market wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74db6f48828293d72409e4b565cbd37d
https://doi.org/10.1109/edssc.2013.6628068
https://doi.org/10.1109/edssc.2013.6628068
Autor:
M. Manjunatha, Jaipal Reddy, V. N. Vasantha Kumar, Shao Ming Yang, Gene Sheu, Chen Po-An, Pawan Kumar
Publikováno v:
2013 IEEE 7th International Power Engineering and Optimization Conference (PEOCO).
This paper presents a low cost innovative duplex channel engineering to simulate and improve specific on-state resistance (Ron) of an Ultra high voltage (UHV) device without compromising on breakdown voltage. In manufacturing of UHV device, tradeoff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec162b062d9b06eb48150a7dc420f95
https://doi.org/10.1109/peoco.2013.6564520
https://doi.org/10.1109/peoco.2013.6564520
Publikováno v:
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS).
This paper discusses a novel structure of deep trench capacitor with breakdown voltage of 10V and capacitance density of 527nF/mm2, serving for Low Dropout Voltage regulator in IC power management. The structure is presented using 3D & 2D Sentaurus S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5f1ef9daee187da7bbfe3a1b383be8
https://doi.org/10.1109/peds.2013.6527050
https://doi.org/10.1109/peds.2013.6527050
Publikováno v:
2012 International Conference on Optoelectronics and Microelectronics.
In this paper, comparison between original and Silicon Controlled Rectifier (SCR) structure of a novel Shallow Trench Isolation (STI)-sided LDMOS with P-top layer is firstly presented. SCR structure can be used as a robust Electrostatic Discharge (ES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e8f4fccdf03a3335456dbeba39c313
https://doi.org/10.1109/icoom.2012.6316330
https://doi.org/10.1109/icoom.2012.6316330