Zobrazeno 1 - 10
of 34
pro vyhledávání: '"V. N. Tomashyk"'
Publikováno v:
Applied Nanoscience. 12:1139-1145
Various experimental approaches of the wet nanoscale treatment have been proposed to account for features of the InAs, InSb and GaAs, GaSb semiconductor dissolution process in the (NH4)2Cr2O7–HBr–EG etching solution. Etching kinetics data showed
Publikováno v:
Applied Nanoscience. 12:603-609
The chemical-dynamic and chemical–mechanical polishing of the CdTe single crystals surfaces by bromine-emerging etching compositions based on aqueous solutions of K2Cr2O7–HBr–solvent has been investigated. The dependences “solution concentrat
Publikováno v:
Inorganic Materials. 56:785-790
We have studied chemical–mechanical and dynamic chemical polishing of the surface of single crystals of PbTe and Pb1 – xSnxTe solid solutions with bromine-releasing etchants based on aqueous (H2O2 + HBr + ethylene glycol)/glycerol solutions. The
Autor:
V. N. Tomashyk, G. P. Malanych
Publikováno v:
Inorganic Materials. 55:641-647
We have studied the effect of HBr concentration in (H2O2–HBr–EG)/EG etching mixtures on chemical–mechanical polishing (CMP) and dynamic chemical polishing (DCP) of single-crystal PbTe and Pb1 –xSnxTe solid solutions. The CMP and DCP rates hav
Autor:
A. S. Stanetskaya, I. B. Stratiychuk, V. N. Tomashyk, G. P. Malanych, I. V. Levchenko, A. A. Korchevoi
Publikováno v:
Inorganic Materials. 53:1109-1114
We have studied the chemical dissolution of InAs, InSb, GaAs, and GaSb crystals in (NH4)2Cr2O7–HBr–C6H8O7 solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, and the kinetics of the chemical int
Publikováno v:
Inorganic Materials. 53:896-901
This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions under reproducible hydrodynamic conditions in the case
Publikováno v:
Inorganic Materials. 53:781-785
We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution
Publikováno v:
Inorganic Materials. 52:106-112
We have studied the dynamic chemical polishing of single crystals of PbTe and Pb1–xSnxTe solid solutions in H2O2–HBr–citric acid bromine-releasing etchants under reproducible hydrodynamic conditions and constructed projections of constant etch
Publikováno v:
Inorganic Materials. 51:15-19
We have studied the chemical polishing of the surface of single crystals of PbTe and Pb1 − xSnxTe solid solutions by H2O2-HBr-C2H2O4 bromine-releasing etchants. The dissolution rate of the crystals has been determined as a function of etchant compo
Publikováno v:
Inorganic Materials. 50:661-666
The chemical polishing of the surface of single crystals of PbTe and Pb1 − x Sn x Te solid solutions by H2O2-HBr-tartaric acid bromine-releasing etchants has been studied for the first time under reproducible hydrodynamic conditions. The dissolutio