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pro vyhledávání: '"V. N. Svede-Shvets"'
Autor:
S. A. Blokhin, A. S. Shulenkov, Nikolai N. Ledentsov, Ekaterina V. Nikitina, A. M. Nadtochiy, Nikolai A. Maleev, Yu. M. Zadiranov, M. M. Kulagina, V. N. Svede-Shvets, V. G. Tikhomirov, James A. Lott, A. G. Kuzmenkov, V. M. Ustinov, A. G. Gladyshev
Publikováno v:
Semiconductors. 45:818-821
Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ac45d665418ff66c02f9304afba963
https://doi.org/10.1134/s1063782611060133
https://doi.org/10.1134/s1063782611060133
