Zobrazeno 1 - 10
of 28
pro vyhledávání: '"V. N. Sheremet"'
Autor:
V. P. Kladko, Alexander Belyaev, A. S. Pilipchuk, T. V. Petlitskaya, V. V. Shynkarenko, A. S. Slepova, R. V. Konakova, A. I. Lubchenko, A. V. Sachenko, N. V. Safryuk-Romanenko, V. N. Sheremet, N. S. Boltovets, V. A. Pilipenko
Publikováno v:
Semiconductors. 53:469-476
The temperature dependences of the specific contact resistance of silicon ρc with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766592e50af9e45ad372def64e916923
https://doi.org/10.1134/s1063782619040055
https://doi.org/10.1134/s1063782619040055
Autor:
Emre Gür, Ilkay Demir, Hadis Morkoç, V. Avrutin, Oguz Gulseren, Ümit Özgür, V. N. Sheremet, Muhammet Genc, Ismail Altuntas, Sezai Elagoz, Atilla Aydinli
Publikováno v:
Proceedings of SPIE-The International Society for Optical Engineering
Date of Conference: 1-6 February 2020 Conference Name: SPIE OPTO, 2020: Gallium Nitride Materials and Devices XV 2020 In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ae6b3ab21d242bf909293e644e4769d
https://aperta.ulakbim.gov.tr/record/9085
https://aperta.ulakbim.gov.tr/record/9085
Autor:
Ismail Altuntas, M. Genç, G. Eğin, M. Elci, Ilkay Demir, Ahmet Emre Kasapoğlu, Sezai Elagoz, Serkan İslamoğlu, N. Muzafferoğlu, Emre Gür, V. N. Sheremet, Oguz Gulseren, Atilla Aydinli
Publikováno v:
Superlattices and Microstructures
WOS: 000463693300002
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series r
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1453d4aeca5deeb468e07b116c85ccbe
https://hdl.handle.net/20.500.12418/5943
https://hdl.handle.net/20.500.12418/5943
Autor:
Ümit Özgür, Hadis Morkoç, Ismail Altuntas, V. N. Sheremet, Negar Gheshlaghi, M. Sozen, N. Sheremet, Kai Ding, Atilla Aydinli, M. Elci, V. Avrutin
Publikováno v:
Superlattices and Microstructures
WOS: 000430037600030
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN str
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17b2ed8946d14281211a782fedba97d0
https://aperta.ulakbim.gov.tr/record/30327
https://aperta.ulakbim.gov.tr/record/30327
Autor:
V. Avrutin, M. Elçi, Atilla Aydinli, Hadis Morkoç, Kai Ding, Ümit Özgür, Ismail Altuntas, M. Genç, N. Sheremet, V. N. Sheremet, Negar Gheshlaghi
Publikováno v:
Superlattices and Microstructures
WOS: 000425566100069
Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch
Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd9e20272008e778637f459ff9342f06
https://aperta.ulakbim.gov.tr/record/29357
https://aperta.ulakbim.gov.tr/record/29357
Autor:
L. M. Kapitanchuk, V. N. Jmerik, V. N. Sheremet, P. N. Romanets, A. V. Sachenko, P. O. Saja, N. V. Safryuk, Pavel N. Brunkov, V. P. Kladko, Alexander Belyaev, Sergei Ivanov, N. S. Boltovets, R. V. Konakova
Publikováno v:
Semiconductors. 49:461-471
The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 1018 cm−3 in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589a4fed8b32497bd42603e5c70370aa
https://doi.org/10.1134/s1063782615040193
https://doi.org/10.1134/s1063782615040193
Autor:
R. V. Konakova, A. V. Sachenko, Svetlana Vitusevich, A. S. Pilipchuk, V. N. Sheremet, Alexander Belyaev, S. V. Novitskii, N. S. Boltovets
Publikováno v:
Technical Physics Letters. 42:649-651
Resistivity ρc of InP- and GaAs-based ohmic contacts has been measured in a temperature range of 4.2–300 K. Both temperature dependences are nonmonotonic and exhibit minima at T = 50 K for InP and T = 150 K for GaAs. The nonmonotonic ρc(T) curves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f3ef8b71e70cf0cef50520c0997a163
https://doi.org/10.1134/s1063785016060286
https://doi.org/10.1134/s1063785016060286
Autor:
V. Avrutin, M. Elçi, Atilla Aydinli, Kai Ding, Hadis Morkoç, N. Sheremet, Ümit Özgür, Ismail Altuntas, M. Genç, V. N. Sheremet
Publikováno v:
Superlattices and Microstructures
WOS: 000415768800128
The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in
The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840c0905531341e79450d62b28ececb9
http://hdl.handle.net/11452/30256
http://hdl.handle.net/11452/30256
Autor:
Alexander Belyaev, N. S. Boltovets, Yu. N. Sveshnikov, R. V. Konakova, V. N. Sheremet, L. M. Kapitanchuk, A. S. Pilipchuk, A. V. Sachenko
Publikováno v:
Semiconductors. 48:1308-1311
The temperature dependence of the contact resistivity ρ c (T) of Au-Ti-Al-Ti-n +-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2–300 K. It is shown that the saturation portion of ρ c (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645dfc02b9ff42ccde9be294ddc03818
https://doi.org/10.1134/s106378261410025x
https://doi.org/10.1134/s106378261410025x
Autor:
Alexander Belyaev, A. O. Vinogradov, T. V. Petlitskaya, A. V. Sachenko, R. V. Konakova, Ya. Ya. Kudryk, V. N. Sheremet, V. A. Anischik, V. A. Pilipenko, N. S. Boltovets
Publikováno v:
Semiconductors. 48:492-496
It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n + �Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n + �Si, which appears during heat treatment at T =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899594a10e89fabb8d74841e42392334
https://doi.org/10.1134/s1063782614040241
https://doi.org/10.1134/s1063782614040241