Zobrazeno 1 - 10
of 15
pro vyhledávání: '"V. N. Shabanov"'
Autor:
A. N. Yablonskiĭ, O. A. Kuznetsov, Boris A. Andreev, V. P. Kuznetsov, A. P. Kasatkin, M. V. Kuznetsov, A. V. Kornaukhov, Z. F. Krasilnik, O. V. Belova, V. N. Shabanov
Publikováno v:
Semiconductors. 42:137-141
Temperature dependences of the concentration and electron Hall mobility in Si:Er/Sr epitaxial layers grown at T = 600°C and annealed at 700 or 900°C have been investigated. The layers were grown by sublimation molecular-beam epitaxy in vacuum (∼1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88083f9f163ec168c7cbb12e75fd57a5
https://doi.org/10.1134/s1063782608020036
https://doi.org/10.1134/s1063782608020036
Autor:
V. N. Shabanov, V. P. Kuznetsov, D. I. Kryzhov, G. A. Maksimov, D. Yu. Remizov, A. N. Shushunov, O. V. Belova, M. V. Stepikhova, Z. F. Krasilnik, R. A. Rubtsova
Publikováno v:
Semiconductors. 40:846-853
In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of room-temperature electroluminescence at 1.54 μm is studied as a function of the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9dede5b1761153309a3729bc689aaf
https://doi.org/10.1134/s1063782606070207
https://doi.org/10.1134/s1063782606070207
Autor:
D. I. Kryzhkov, V. P. Kuznetsov, Z. F. Krasil’nik, V. N. Shabanov, D. Yu. Remizov, V. B. Shmagin, L. V. Krasilnikova, M. N. Drozdov
Publikováno v:
Physics of the Solid State. 46:109-112
A series of Si: Er/Si light-emitting diode structures with a smoothly varying p-n junction breakdown mechanism, grown through sublimation molecular-beam epitaxy, is used to investigate the effect of the breakdown mechanism on the electroluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34711fc44055a630e607e9e201f1650
https://doi.org/10.1134/1.1641934
https://doi.org/10.1134/1.1641934
Autor:
O. V. Belova, V. B. Shmagin, A. V. Kornaukhov, K. E. Kudryavtsev, D. Yu. Remizov, Z. F. Krasilnik, V. P. Kuznetsov, M. V. Kuznetsov, Boris A. Andreev, V. N. Shabanov, S. V. Obolensky
Publikováno v:
Semiconductors. 41:1312-1314
Results of experimental studies of erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures grown by sublimation molecular-beam epitaxy are discussed. The distinctive feature of these structures is that the regions of electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8af365aec7c4ee803e84c07dd85ae90
https://doi.org/10.1134/s1063782607110073
https://doi.org/10.1134/s1063782607110073
Autor:
S. A. Denisov, D. V. Shengurov, V. G. Shengurov, V. N. Shabanov, M. V. Stepikhova, Z. F. Krasilnik, V. Yu. Chalkov, Yu. N. Drozdov, L. V. Krasilnikova, S. P. Svetlov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 71:113-115
High-quality Si1 − x Ge x :Er epitaxial layers have been grown on Si(100) substrates at a relatively low temperature (500°C) by sublimation of silicon in GeH4 gas atmosphere. It has been established using capacitance-voltage measurements, X-ray di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f988d5bfd822ad8cf92aab09a3465d13
https://doi.org/10.3103/s1062873807010297
https://doi.org/10.3103/s1062873807010297
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 75:556-558
Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e8bd092990bacb09c6111f1c7505ba
https://doi.org/10.1134/1.1500720
https://doi.org/10.1134/1.1500720
Autor:
V. A. Bashkin, V. N. Shabanov
Publikováno v:
Fluid Dynamics. 28:111-118
The method of matched asymptotic expansions is used to investigate the problem of supersonic perfect-gas flow over a semi-infinite surface with longitudinal ribbing formed by imposing small transverse harmonic perturbations on a flat plate. The ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68c985c292349c3fca46f7280d09eb9
https://doi.org/10.1007/bf01055673
https://doi.org/10.1007/bf01055673
Publikováno v:
Hydrotechnical Construction. 26:5-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e766eb1fc3ca7a5c6230a7c55249702a
https://doi.org/10.1007/bf01545342
https://doi.org/10.1007/bf01545342
Publikováno v:
Scopus-Elsevier
The effect of the substrate temperature Ts on the sheet resistance Rs for polycrystalline Si films obtained by molecular-beam deposition was investigated. It was found that Rs is a nonmonotonic function of Ts for films doped with different impurities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10aae110a955028397a51fad27c81fac
https://doi.org/10.1134/1.1187438
https://doi.org/10.1134/1.1187438
Publikováno v:
Technical Physics Letters. 23:281-283
It is shown that high-quality structures may be fabricated by applying a potential to the substrate to obtain n-and p-type delta-layers during low-temperature growth of epitaxial layers from subliming silicon sources doped with antimony or gallium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930b57d6ecdf671990a32aeab1044ad2
https://doi.org/10.1134/1.1261843
https://doi.org/10.1134/1.1261843