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pro vyhledávání: '"V. N. Rasputnyi"'
Autor:
V. S. Pantuev, V. I. Egorkin, S. S. Shmelev, V. N. Rasputnyi, A. A. Gorbatsevich, V. A. Bespalov, A. V. Vorontsov, Yu. N. Sveshnikov, E. A. Il’ichev, A. V. Kulakov, G. P. Zhigal'skii, B. G. Nalbandov
Publikováno v:
Technical Physics. 49:310-317
Results of complex experiments aimed at finding a relationship between the properties of initial GaAs single-crystal wafers and epitaxial films and the threshold spectrometric characteristics of ionizing radiation detectors are reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4003aa1aea53484fab3386f8ec4f561
https://doi.org/10.1134/1.1688416
https://doi.org/10.1134/1.1688416
