Zobrazeno 1 - 10
of 23
pro vyhledávání: '"V. N. Nevedomskiy"'
Autor:
V. N. Nevedomskiy, A. M. Rumyantsev, A. V. Parfen’eva, V. P. Ulin, A. V. Nashchekin, Ekaterina V. Astrova, M. V. Baidakova
Publikováno v:
Technical Physics Letters. 46:114-117
Influence exerted by the temperature of annealing in the atmosphere of argon on the ability of Si‒C nanocomposites to enable a reversible introduction of lithium has been studied. It was found that the higher the annealing temperature in the format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd3cbc00ff5ea6d068bb580d6f19a73
https://doi.org/10.1134/s1063785020020042
https://doi.org/10.1134/s1063785020020042
Autor:
D. A. Mikhailov, Sergey O. Slipchenko, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, Vladislav E. Bougrov, L. Ya. Karachinsky, D. V. Denisov, A. V. Lutetskiy, V. N. Nevedomskiy, Innokenty I. Novikov, Nikita A. Pikhtin, A. Yu. Egorov, E. S. Kolodeznyi, Vladislav V. Dudelev, A. S. Ionov, Grigorii S. Sokolovskii
Publikováno v:
Technical Physics Letters. 45:735-738
Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In0.53Ga0.47As/Al0.48In0.52As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff8869bef442657ce2a02ae12030575d
https://doi.org/10.1134/s1063785019070174
https://doi.org/10.1134/s1063785019070174
Autor:
A. M. Nadtochiy, N. A. Kalyuzhnyy, V. N. Nevedomskiy, S. A. Mintairov, A. E. Zhukov, Mikhail V. Maximov
Publikováno v:
Semiconductors. 51:672-678
InAs quantum dots (QDs) in a metamorphic InGaAs matrix are grown by MOVPE (metal-organic vapor-phase epitaxy) on GaAs substrates. The QDs emit light in the range 1380–1400 nm at room temperature. A multilayer metamorphic buffer (MB) consisting of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bc7be2f8e55d3d5012f929387e2a6d
https://doi.org/10.1134/s1063782617050189
https://doi.org/10.1134/s1063782617050189
Autor:
Dina G. Kellerman, A. S. Semenova, V.I. Popkov, V. V. Gusarov, O.V. Almjasheva, V. N. Nevedomskiy
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:7163-7170
In recent years materials based on nanocrystalline YFeO3 draw considerable research interest as the basis of innovative magnetic and magneto-optical devices. However, the size and the morphology of the nanocrystals are well-known to have a drastic in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5125e55db49632e4ceb85612023ed3a7
https://doi.org/10.1007/s10854-017-6676-1
https://doi.org/10.1007/s10854-017-6676-1
Autor:
Ekaterina V. Nikitina, A. E. Zhukov, Eduard Moiseev, V. N. Nevedomskiy, N. V. Kryzhanovskaya, Mikhail V. Maximov, Yu. S. Polubavkina, A. Yu. Egorov, A. A. Lazarenko
Publikováno v:
Semiconductors. 51:267-271
The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::020320621681ef9a7e183ab0d6c4609b
https://doi.org/10.1134/s1063782617020087
https://doi.org/10.1134/s1063782617020087
Autor:
Emanuele Pelucchi, A. V. Shelaev, D. V. Lebedev, A. A. Toropov, V. N. Nevedomskiy, A. S. Vlasov, V. A. Bykov, Gediminas Juska, Aaron B. Naden, N. Bert, Agnieszka Gocalinska, M. V. Rakhlin, K. G. Belyaev, Alexander Mintairov, Miryam Arredondo
Publikováno v:
Mintairov, A M, Lebedev, D V, Bert, N, Belyaev, K G, Nevedomskiy, V N, Rakhlin, M V, Toropov, A A, Vlasov, A S, Gocalinska, A, Juska, G, Pelucchi, E, Arredondo, M A, Naden, A B, Shelaev, A V & Bykov, V A 2019, ' Atomic Ordering and bond relaxation in optical spectra of self-organized InP/GaInP2 Wigner molecule structures ', Applied Physics Letters, vol. 115, no. 20, 202104 . https://doi.org/10.1063/1.5126527
A.M.M., D.V.L., and A.S.V. acknowledge the support of the Russian Science Foundation Grant No. 19-19-00246. K.G.B., M.V.R., and A.A.T. acknowledge the financial support of the Russian Foundation for Basic Research (Project No. 18-02-01212). This rese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40c5c28a4c84751f2ce589dd66f43f7c
https://hdl.handle.net/10023/19032
https://hdl.handle.net/10023/19032
Autor:
V. N. Nevedomskiy, V. E. Bugrov, Innokenty I. Novikov, A. Yu. Egorov, L. Ya. Karachinsky, A. V. Babichev
Publikováno v:
Semiconductors. 50:612-615
It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806c7a8196fbc2a2517336fa87802f5b
https://doi.org/10.1134/s1063782616050079
https://doi.org/10.1134/s1063782616050079
Autor:
V. N. Nevedomskiy, V. V. Chaldyshev, V. V. Preobrazhernskiy, Mikhail A. Putyato, N. A. Bert, B. R. Semyagin
Publikováno v:
Semiconductors. 49:1661-1664
A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4961549cd7ccf9eddbc1349ca4ae838b
https://doi.org/10.1134/s106378261512012x
https://doi.org/10.1134/s106378261512012x
Autor:
Alexander S. Gudovskikh, A. V. Uvarov, Artem Baranov, D. A. Kudryashov, Jean-Paul Kleider, Ivan A. Morozov, V. N. Nevedomskiy
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (34), pp.345105. ⟨10.1088/1361-6463/ab8bfd⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (34), pp.345105. ⟨10.1088/1361-6463/ab8bfd⟩
An approach for epitaxial growth of GaP layer on Si substrate at low temperature (380°C) by plasma-enhanced atomic layer deposition (PEALD) is explored. A significant improvement of the crystalline properties of the GaP layers was obtained using add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0858346a0f0fcc793e2751ecc18d894b
https://doi.org/10.1088/1361-6463/ab8bfd
https://doi.org/10.1088/1361-6463/ab8bfd
Autor:
V. E. Bugrov, V. N. Nevedomskiy, Innokenty I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, A. V. Babichev
Publikováno v:
Semiconductors. 49:1522-1526
Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d3fa2b204368ecc5c1882b5fb75b21
https://doi.org/10.1134/s1063782615110068
https://doi.org/10.1134/s1063782615110068