Zobrazeno 1 - 7 of 7 pro vyhledávání: '"V. N. Lutskii"'
1
Contact potential difference in certain low-dimensional systems and possibilities of studying their energy spectrum
Autor: V. N. Lutskii
Publikováno v: Journal of Communications Technology and Electronics. 52:1370-1372
The appearance of jumps of the contact potential difference in systems with a size-quantized film or a superlattice during variation of the magnetic field is considered. It is proposed to use these features for determination of microscopic parameters
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c7312506501a9a1c1d552232216f3ec
https://doi.org/10.1134/s1064226907120108
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2
Specific features of electron autoemission from some low-dimensional systems in a quantizing magnetic field
Autor: V. N. Lutskii
Publikováno v: Journal of Communications Technology and Electronics. 54:336-337
The possibility of the appearance of kinks (including multiple ones) on curves of the dependence of the autoelectron current on the transverse-quantizing-magnetic-field strength for low-dimensional systems containing a film or superlattice is indicat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04e6b5a034b1a8bcf14c8d7a82955b24
https://doi.org/10.1134/s1064226909030127
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4
The Feasibility of creating a high-speed semiconductor—semimetal—semiconductor transistor
Autor: M.I. Elinson, V. N. Lutskii, T. N. Pinsker
Publikováno v: Russian Microelectronics. 29:217-218
The feasibility of creating a semiconductor-semimetal-semiconductor transistor with fast electron transit through its base is considered.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0deb2d08ad47f37b26780cf1a049b876
https://doi.org/10.1007/bf02773269
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6
Tunnel spectroscopy of thin bismuth films
Autor: V. N. Lutskii, V. A. Volkov, M.I. Elinson, T. N. Pinsker, N. E. Nikitin
Publikováno v: physica status solidi (b). 69:145-152
A quantitative study is made of the band structure in Bi by tunnel spectroscopy of size-quantized films. The positions of quantum energy levels are determined for a wide range of film thickness (700 to 3200 A). On the basis of the two-band model the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cdb487f21960882b412ae8dea3324f66
https://doi.org/10.1002/pssb.2220690116
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