Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V. N. Katerinchuk"'
Publikováno v:
Technical Physics. 59:407-410
The object of investigation is photoresponse spectra taken from the cleaved end face of heterojunctions formed by GaSe and InSe anisotropic crystals. Spectra taken from the as-prepared and chemically processed faces of the heterojunctions are compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be9dbaefedea293b03da6f6b828f33c0
https://doi.org/10.1134/s1063784214030141
https://doi.org/10.1134/s1063784214030141
Publikováno v:
Semiconductors. 41:1056-1059
Long-term (for 24–120 h) oxidation of n-InSe crystals in air brings about the formation of a potential barrier, while variation in the conditions of thermal oxidation affects the electrical and photoelectric parameters of the obtained structures. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7017c8da8f9619da590d57e139fbc18f
https://doi.org/10.1134/s1063782607090096
https://doi.org/10.1134/s1063782607090096
Publikováno v:
Physics of the Solid State. 49:1572-1578
Variations in the morphology of an InSe surface caused by air oxidation and the influence of the oxide-layered-semiconductor heteroboundary on the photoelectric properties of the In2O3-InSe structure were studied. It is found that an ordered nanosize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1386f0c2e6bfd8750e6336ade1a13d0f
https://doi.org/10.1134/s106378340708029x
https://doi.org/10.1134/s106378340708029x
Autor:
V. N. Katerinchuk, Zakhar D. Kovalyuk
Publikováno v:
Semiconductors. 38:402-405
Heterostructures consisting of p-InSe and native oxide were formed by thermal oxidation of indium selenide crystals in air. Long-term (for 1–5 days) oxidation of InSe substrates at 450°C leads to changes in both the photosensitivity spectral band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::856a949dbb4b4cf49333d51355658765
https://doi.org/10.1134/1.1734666
https://doi.org/10.1134/1.1734666
Publikováno v:
Optical Materials. 17:279-281
Photoresponse spectra of anisotropic InSe crystals are investigated depending on the orientation of an illuminated sample surface with respect to light direction. We have detected the differences in the photoresponse spectra in the E || C and E 1 C c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3935810c228f1ed32191ecd526cc8031
https://doi.org/10.1016/s0925-3467(01)00092-1
https://doi.org/10.1016/s0925-3467(01)00092-1
Publikováno v:
Inorganic Materials. 37:336-338
The photoelectric properties of n-SnS1.9Se0.1 /p-GaSe〈Cd〉 heterojunctions prepared by optical-contact bonding were studied, and the energy-band diagram of the heterojunctions was constructed using capacitance–voltage data. Charge transport thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61211296c480ce16af398c8b8d16f2d2
https://doi.org/10.1023/a:1017515524998
https://doi.org/10.1023/a:1017515524998
Autor:
M. Z. Kovalyuk, V. N. Katerinchuk
Publikováno v:
Physica Status Solidi (a). 133:K45-K48
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::270f55a36f4d66f7b0f8740354894280
https://doi.org/10.1002/pssa.2211330128
https://doi.org/10.1002/pssa.2211330128
Autor:
M. Z. Kovalyuk, V. N. Katerinchuk
Publikováno v:
Technical Physics Letters. 25:54-55
The photoelectric properties of In2O3-GaTe and GaTe-InSe heterojunctions were investigated. Their characteristics were described using a diffusion model of the heterojunction. Some deviation of the characteristics from ideal was observed for In2O3-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e81ef2940d403dc79d4ddbb72db2341
https://doi.org/10.1134/1.1262353
https://doi.org/10.1134/1.1262353
Publikováno v:
Physica Status Solidi (a). 148:K75-K76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02637e13b6ccd6224be28ecacae44b6d
https://doi.org/10.1002/pssa.2211480237
https://doi.org/10.1002/pssa.2211480237
Autor:
V. N. Katerinchuk, M. Z. Kovalyuk
Publikováno v:
Technical Physics Letters. 23:377-377
A layered InSe crystal is used to fabricate a polarimetric photodetector. The heterostructure is formed in the plane perpendicular to the cleavage plane of the layers by thermal oxidation of the crystal substrate. The coefficient of photopleochroism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d21dc5698b5926065f15738c2fcd605b
https://doi.org/10.1134/1.1261674
https://doi.org/10.1134/1.1261674