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pro vyhledávání: '"V. N. Kanishchev"'
Autor:
V. N. Kanishchev, S. V. Barannik
Publikováno v:
Crystallography Reports. 57:974-978
The time dependence of the crystallization rate at crystal pulling to the cold zone with a velocity that has a sinusoidal component has been investigated within a one-dimensional time-dependent model of solidification of a diluted binary melt by the
Autor:
V. V. Baranov, G. T. Adonkin, S. V. Nizhankovskiy, A. T. Budnikov, E. V. Krivonosov, V. N. Kanishchev, L. A. Grin
Publikováno v:
Inorganic Materials. 48:1111-1114
We have found conditions for the growth of Ti:sapphire crystals with a uniform dopant profile by horizontal directional solidification (HDS) in protective gaseous atmospheres of different compositions at different pressures. The results demonstrate t
Autor:
S. V. Barannik, V. N. Kanishchev
Publikováno v:
Crystallography Reports. 55:882-886
The time dependence of the crystallization rate V(t) in the transient process that occurs during crystal pulling into a cold zone at a constant rate W has been investigated within the one-dimensional time-dependent model of binary melt solidification
On the dependence of the critical crystallization rate on the initial impurity concentration in melt
Autor:
V. N. Kanishchev, S. V. Barannik
Publikováno v:
Crystallography Reports. 54:1268-1272
The dependence of the critical crystallization rate on the initial impurity concentration in melt is derived by determining the condition at which a nonplanar solution to the stationary diffusion problem arises. It is suggested that the conditions at
On the dependence of the surface tension at the crystal-melt interface on the impurity concentration
Autor:
S. V. Barannik, V. N. Kanishchev
Publikováno v:
Crystallography Reports. 54:702-706
The stationary task of impurity diffusion in a melt has been solved within a two-dimensional crystallization model in a second-order approximation with respect to the amplitude of deviation from a smooth crystallization front. The dependence of the s
Autor:
N. S. Sidelnikova, S. V. Nizhankovskiy, V. N. Kanishchev, L. A. Grin, A. Ja. Dan’ko, V. M. Puzikov, G. T. Adonkin
Publikováno v:
Crystallography Reports. 53:1272-1275
This paper reports on the results obtained during the development of the technological process of growth of sapphire crystals for optoelectronics through horizontal directional crystallization in a gaseous argon medium at a pressure of 800 mmHg. The
Autor:
V. N. Kanishchev, S. V. Barannik
Publikováno v:
Crystallography Reports. 51:116-121
The stability of the flat crystallization front of a dilute binary melt is investigated within the two-dimensional model of solidification taking into account the latent heat of fusion and the difference between thermal conductivities of the solid an
Autor:
V. N. Kanishchev
Publikováno v:
Crystallography Reports. 49:1053-1055
The variational method is applied to the study of crystal growth from melt under the condition that the boundary between the liquid and solid phases has a cellular structure. The surface energy of the interface is taken into account.
Publikováno v:
Journal of Applied Spectroscopy. 58:430-432
Autor:
V. N. Kanishchev
Publikováno v:
Journal of Experimental and Theoretical Physics. 118:671-671
The cause of oscillations of the crystallization rate of a binary melt that arise in the initial transient process and have been revealed earlier in numerical experiments is investigated theoretically. Within a simple time-dependent model of directed