Zobrazeno 1 - 10
of 138
pro vyhledávání: '"V. N. Jmerik"'
Autor:
Y. Robin, S. Y. Bae, T. V. Shubina, M. Pristovsek, E. A. Evropeitsev, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, V. N. Jmerik, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Abstract We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. Th
Externí odkaz:
https://doaj.org/article/0bf6213e55be44faa678ee6db49bf8fb
Autor:
V. N. Jmerik, E. A. Evropeitsev, A. A. Toropov, Dmitrii V. Nechaev, T. V. Shubina, Yu. M. Serov
Publikováno v:
JETP Letters. 113:504-509
The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation decay curves are theoretically simulated w
Autor:
V. N. Jmerik
Publikováno v:
digital Encyclopedia of Applied Physics
Autor:
Alexander N. Smirnov, Dmitrii V. Nechaev, M. B. Smirnov, Yu. E. Kitaev, V. Yu. Davydov, M. A. Yagovkina, I. A. Eliseyev, V. N. Jmerik, Evgenii M. Roginskii
Publikováno v:
Semiconductors. 54:1706-1709
We report the results of systematic experimental and theoretical studies of structural and dynamical properties of short-period GaN/AlN superlattices. The multilayer structures with the thicknesses of the constituent layers varying from two to severa
Autor:
Nikolay Atanov, Vyacheslav Tereshchenko, Stefan Ivanov, Y. Davydov, V. N. Jmerik, Dmitrii V. Nechaev, V. Glagolev
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1760-1764
Barium fluoride (BaF2) crystals are considered as a candidate scintillator for scintillation detectors in high-energy physics because of high radiation hardness and short decay time (< 1 ns) of the fast emission component. However, the high level of
Autor:
V. N. Jmerik, A. V. Myasoedov, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, Dmitrii V. Nechaev
Publikováno v:
Technical Physics Letters. 46:543-547
We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with
Autor:
Alexander M. Mintairov, P. A. Balunov, I. D. Breev, M. S. Dunaevskiy, A. S. Goltaev, V. N. Jmerik, A. S. Vlasov, A. M. Mintairov
Publikováno v:
SSRN Electronic Journal.
Autor:
Yaroslav M. Beltukov, Stefan Ivanov, Dmitrii V. Nechaev, Evgenii M. Roginskii, Pavel N. Brunkov, Yu. E. Kitaev, V. Yu. Davydov, Alexander N. Smirnov, V. N. Jmerik, I. A. Eliseyev, M. B. Smirnov
Publikováno v:
Semiconductors. 53:1479-1488
We report the results of systematic Raman spectroscopy studies of AlxGa1 –xN (x ~ 0.75) layers grown using plasma-assisted molecular beam epitaxy at various stoichiometric conditions and growth fluxes. The high-intensity asymmetric low-frequency pe
Autor:
Valery Yu. Davydov, Alexander N. Smirnov, Mikhail B. Smirnov, I. A. Eliseyev, V. N. Jmerik, T. V. Shubina, Yuri E. Kitaev, W. V. Lundin, Evgenii M. Roginskii, Markus Pristovsek, Dmitrii V. Nechaev, Eugene E Zavarin
Publikováno v:
Nanomaterials
Volume 11
Issue 9
Nanomaterials, Vol 11, Iss 2396, p 2396 (2021)
Volume 11
Issue 9
Nanomaterials, Vol 11, Iss 2396, p 2396 (2021)
We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp inter
Autor:
Dmitrii V. Nechaev, Tao Wang, Xinqiang Wang, D. E. Sviridov, Stefan Ivanov, N. A. Gamov, Nikita D. Prasolov, Lars Grieger, Yixin Wang, Vladimir I. Kozlovsky, Mikhail Zverev, Kseniya Orekhova, V. N. Jmerik
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 2553, p 2553 (2021)
Volume 11
Issue 10
Nanomaterials, Vol 11, Iss 2553, p 2553 (2021)
Volume 11
Issue 10
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which