Zobrazeno 1 - 10
of 23
pro vyhledávání: '"V. N. Dobrovolsky"'
Autor:
D. V. Streltsov, K. O. Naka, V. V. Nelidov, K. O. Sarkisov, V. N. Dobrovolsky, I. P. Lebedeva, I. A. Romanova
Publikováno v:
Японские исследования, Iss 1, Pp 111-129 (2023)
In the second half of 2022, the Japanese political world was shaken by a major scandal: in July 2022, former Prime Minister and a prominent member of the ruling Liberal Democratic Party Abe Shinzō was killed at an election rally. The assassin, caugh
Externí odkaz:
https://doaj.org/article/b263457a293946ee939018355c0ab1bc
Publikováno v:
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and ope
Publikováno v:
Telecommunications and Radio Engineering. 68:549-554
Autor:
Sorin Cristoloveanu, V. N. Dobrovolsky
Publikováno v:
Microelectronic Engineering. 72:379-382
A theoretical model is developed which gives useful expressions for the characteristics of the depleted space-charge region of the P-N+ junction in thin SOI MOS structures. The two-dimensional distributions of the electric field and potential cardina
Publikováno v:
Microelectronic Engineering. 72:383-387
Silicon-on-Insulator Field-Effect Transistors were investigated at extremely high drain currents. These currents heat the silicon film of transistor and cause the generation of thermal electron-hole plasma there. We discovered the red light emission
Publikováno v:
Microelectronic Engineering. 59:509-513
Calculation of electron-hole pair drift velocity in silicon is represented. It was shown that the reversed pair drift must take place in n-silicon. The silicon-on-insulator structure was used for the reversed drift observation.
Autor:
V. N. Dobrovolsky, A. N. Krolevets
Publikováno v:
Journal of Applied Physics. 85:1956-1960
Magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors (MAGFETs) are used as magnetic field sensors. The Hall effect in the high-resistance channel region near the drain ensures a high magnetic field sensitivity of the transi
Publikováno v:
2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES.
Submillimeter technologies now received increasing interest for scientific and commercial applications (e.g., imaging, security, biological, drugs and explosion detection, gases fingerprints, etc.) (see, e.g., [1–3]) and these technologies frequent
Publikováno v:
Solid-State Electronics. 44:1865-1867
Depending on the FET application, its channel shape may be different [1–5]. However, for all FET types the theory has been developed only in the simplest case of a rectangular transistor channel. Therefore there is a problem of calculating the char
Autor:
N. I. Momot, V. Zabudsky, J. Gumenjuk-Sychevska, Fiodor F. Sizov, Yu. Kamenev, V. N. Dobrovolsky
Publikováno v:
SPIE Proceedings.
Narrow-gap direct detection mercury cadmium telluride (MCT) THz semiconductor hot electron bolometer (SHEB) is considered. Device operation takes into account the phenomena in semiconductor bipolar plasma and hot-carrier effect at uncooled or slightl