Výsledky vyhledávání - "V. N. Brudnyĭ"

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

Autor: L. S. Smirnov, N. G. Kolin, V. N. Brudnyĭ

Publikováno v: Semiconductors. 41:1011-1020

A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (Flim) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8f72c8d40afd0c5c7f4bcf8acff55e2
https://doi.org/10.1134/s1063782607090023

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Deep levels of intrinsic point defects and the nature of 'anomalous' optical absorption in ZnGeP2

Autor: V. G. Voevodin, V. N. Brudnyĭ, S. N. Grinyaev

Publikováno v: Physics of the Solid State. 48:2069-2083

Deep levels of single vacancies and antisite defects in the structure of the ZnGeP2 compound are investigated using the pseudopotential method and an extended unit cell. The data obtained are compared with those for the GaP isoelectronic analog. It i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4824bc78a93fb60489a50fbf18449f86
https://doi.org/10.1134/s1063783406110060

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