Zobrazeno 1 - 10
of 16
pro vyhledávání: '"V. N. Brudnyĭ"'
Publikováno v:
Semiconductors. 41:1011-1020
A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (Flim) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f72c8d40afd0c5c7f4bcf8acff55e2
https://doi.org/10.1134/s1063782607090023
https://doi.org/10.1134/s1063782607090023
Publikováno v:
Physics of the Solid State. 48:2069-2083
Deep levels of single vacancies and antisite defects in the structure of the ZnGeP2 compound are investigated using the pseudopotential method and an extended unit cell. The data obtained are compared with those for the GaP isoelectronic analog. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4824bc78a93fb60489a50fbf18449f86
https://doi.org/10.1134/s1063783406110060
https://doi.org/10.1134/s1063783406110060
La aleación ternaria semiconductora de nitruro de indio y aluminio (InxAl1-xN) despierta cada vez mayor interés en la industria, debido a sus potenciales aplicaciones en dispositivos optoelectrónicos y fotovoltaicos. Debido a esto, en la última d
Autor:
Edward D. Palik
This set of five volumes, four volumes edited by Edward D. Palik and a volume by Gorachand Ghosh, is a unique resource for any science and technology library. It provides materials researchers and optical device designers with reference facts in a co
Autor:
Zekentes, K., Vasilevskiy, K.
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Dopi
Written by the leading names in this field, this book introduces the technical properties, design and fabrication details, measurement results, and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the AT
Autor:
Ashutosh Tiwari, Sergiy Valyukh
An essential resource for scientists designing new energy materials for the vast landscape of solar energy conversion as well as materials processing and characterization Based on the new and fundamental research on novel energy materials with tailor
Autor:
Stephen Pearton
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave de
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies th
In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesiv