A microplasma process for hexagonal boron nitride thin film synthesis

Autor: G. Lombardi, Hiba Kabbara, J. Santos Sousa, S. Kasri, G. Bauville, V. Mille, Kristaq Gazeli, Alexandre Tallaire, C. Lazzaroni, O. Brinza

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2020, 116 (17), pp.171902. ⟨10.1063/1.5143948⟩

International audience; ABSTRACTA process based on microplasmas generated in Ar/N2 mixtures for nanomaterial synthesis is described in this Letter. The targeted material is hexagonal boron nitride (h-BN) that is in high demand for electronic and opto

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5db4e915e955295b21a880b8c79b8b42
https://hal.archives-ouvertes.fr/hal-02557411

Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond

Autor: Alexandre Tallaire, Jocelyn Achard, A. Valentin, V. Mille, Ovidiu Brinza, A. Tardieu, R. Issaoui, M. De Feudis

Publikováno v: Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩
Diamond and Related Materials, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩

A process to obtain ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films was developed. Samples were contacted by Ti/Au metallic pads in the transmission line model (TLM) configuration. The electric contacts were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea0ba1ee3aa3e7be980517169932e0e4
https://hal.archives-ouvertes.fr/hal-02346255

Temperature dependent creation of nitrogen-vacancy centers in single crystal CVD diamond layers

Autor: Alix Gicquel, Jean-François Roch, Jocelyn Achard, Bernd Abel, Ovidiu Brinza, V. Mille, Jan Meijer, Alexandre Tallaire, Sébastien Pezzagna, Vincent Jacques, Margarita Lesik

Publikováno v: Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2015, 51, pp.55-60. ⟨10.1016/j.diamond.2014.11.010⟩

In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV−) cente

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1f5d089d4216bdad9ece33355822f3f
https://doi.org/10.1016/j.diamond.2014.11.010

Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2 /O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates

Autor: L. William, Alexandre Tallaire, Alix Gicquel, Jocelyn Achard, A. Boussadi, Ovidiu Brinza, Mehdi Naamoun, V. Mille

Publikováno v: physica status solidi (a). 211:2264-2267

H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate's surface prior to homoepitaxial CVD diamond growth particularly in the case of thick films. It allows removing surface defects i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e35b4e5b0ca3de193524eb8558041857
https://doi.org/10.1002/pssa.201431181

Identification of Dislocations in Synthetic Chemically Vapor Deposited Diamond Single Crystals

Autor: Alexandre Tallaire, V. Mille, Hakima Bensalah, Ovidiu Brinza, Julien Barjon, Robin Cours, Arthur Lantreibecq, Marc Legros, Jocelyn Achard, Thierry Ouisse

Publikováno v: Crystal Growth & Design
Crystal Growth & Design, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩

International audience; High purity chemically vapor deposited (CVD) diamond single crystals are now widely available. However, the reduction of dislocations in this material still remains an important challenge that will strongly condition its adopt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::859ce28b8ebd31b6365d64950a8f2fa6
https://hal.science/hal-01456077