Zobrazeno 1 - 10
of 56
pro vyhledávání: '"V. Mille"'
Autor:
Alexandre Tallaire, Julien Delchevalrie, O. Brinza, Jocelyn Achard, V. Mille, R. Issaoui, Samuel Saada, L. Mehmel, F. Bénédic, Jean-Charles Arnault
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩
Applied Physics Letters, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩
Applied Physics Letters, American Institute of Physics, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩
Applied Physics Letters, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩
International audience; The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f21d675849584b993c9c28331d17ebb
https://hal-cea.archives-ouvertes.fr/cea-03141091
https://hal-cea.archives-ouvertes.fr/cea-03141091
Autor:
G. Lombardi, Hiba Kabbara, J. Santos Sousa, S. Kasri, G. Bauville, V. Mille, Kristaq Gazeli, Alexandre Tallaire, C. Lazzaroni, O. Brinza
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2020, 116 (17), pp.171902. ⟨10.1063/1.5143948⟩
Applied Physics Letters, American Institute of Physics, 2020, 116 (17), pp.171902. ⟨10.1063/1.5143948⟩
International audience; ABSTRACTA process based on microplasmas generated in Ar/N2 mixtures for nanomaterial synthesis is described in this Letter. The targeted material is hexagonal boron nitride (h-BN) that is in high demand for electronic and opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5db4e915e955295b21a880b8c79b8b42
https://hal.archives-ouvertes.fr/hal-02557411
https://hal.archives-ouvertes.fr/hal-02557411
Autor:
J.M. Brom, Ovidiu Brinza, A.N. Katrusha, Jocelyn Achard, Y. Loguinov, V. Mille, A. Koliadin, Alexandre Tallaire, Thu Nhi Tran Thi
Publikováno v:
Diamond and Related Materials. 77:146-152
The suitability of type IIa diamonds prepared by High Pressure High Temperature (HPHT) in cubic presses at New Diamond Technology was assessed as substrates for the growth of thick detector-grade quality Chemically Vapour Deposited (CVD) diamond film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a2a4f72edfbad2b0624543630a93914
https://doi.org/10.1016/j.diamond.2017.07.002
https://doi.org/10.1016/j.diamond.2017.07.002
Autor:
Alexandre Tallaire, Jocelyn Achard, A. Valentin, V. Mille, Ovidiu Brinza, A. Tardieu, R. Issaoui, M. De Feudis
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩
Diamond and Related Materials, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩
Diamond and Related Materials, Elsevier, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩
Diamond and Related Materials, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩
A process to obtain ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films was developed. Samples were contacted by Ti/Au metallic pads in the transmission line model (TLM) configuration. The electric contacts were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea0ba1ee3aa3e7be980517169932e0e4
https://hal.archives-ouvertes.fr/hal-02346255
https://hal.archives-ouvertes.fr/hal-02346255
Akademický článek
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Autor:
Alix Gicquel, Jean-François Roch, Jocelyn Achard, Bernd Abel, Ovidiu Brinza, V. Mille, Jan Meijer, Alexandre Tallaire, Sébastien Pezzagna, Vincent Jacques, Margarita Lesik
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2015, 51, pp.55-60. ⟨10.1016/j.diamond.2014.11.010⟩
Diamond and Related Materials, Elsevier, 2015, 51, pp.55-60. ⟨10.1016/j.diamond.2014.11.010⟩
In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV−) cente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1f5d089d4216bdad9ece33355822f3f
https://doi.org/10.1016/j.diamond.2014.11.010
https://doi.org/10.1016/j.diamond.2014.11.010
Autor:
L. William, Alexandre Tallaire, Alix Gicquel, Jocelyn Achard, A. Boussadi, Ovidiu Brinza, Mehdi Naamoun, V. Mille
Publikováno v:
physica status solidi (a). 211:2264-2267
H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate's surface prior to homoepitaxial CVD diamond growth particularly in the case of thick films. It allows removing surface defects i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35b4e5b0ca3de193524eb8558041857
https://doi.org/10.1002/pssa.201431181
https://doi.org/10.1002/pssa.201431181
Autor:
Jocelyn Achard, Mehdi Naamoun, Ovidiu Brinza, V. Mille, Alix Gicquel, François Silva, Alexandre Tallaire
Publikováno v:
Diamond and Related Materials. 33:71-77
The growth of millimetre-thick diamond single crystals by plasma assisted CVD is complicated by the formation of unepitaxial defects, particularly at the edges of the crystal. These defects tend to encroach on the top surface hence limiting the maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f79825513c788b9a44a5a8171dc5a299
https://doi.org/10.1016/j.diamond.2013.01.006
https://doi.org/10.1016/j.diamond.2013.01.006
Autor:
Alexandre Tallaire, V. Mille, Hakima Bensalah, Ovidiu Brinza, Julien Barjon, Robin Cours, Arthur Lantreibecq, Marc Legros, Jocelyn Achard, Thierry Ouisse
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩
Crystal Growth & Design, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩
Crystal Growth & Design, American Chemical Society, 2016, 16 (5), pp.2741-2746. ⟨10.1021/acs.cgd.6b00053⟩
International audience; High purity chemically vapor deposited (CVD) diamond single crystals are now widely available. However, the reduction of dislocations in this material still remains an important challenge that will strongly condition its adopt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::859ce28b8ebd31b6365d64950a8f2fa6
https://hal.science/hal-01456077
https://hal.science/hal-01456077
Publikováno v:
physica status solidi (a). 208:2023-2027
The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772a29ce20cea6de6480e7ff7303be90
https://doi.org/10.1002/pssa.201100045
https://doi.org/10.1002/pssa.201100045