Zobrazeno 1 - 10
of 1 581
pro vyhledávání: '"V. Malyarchuk"'
Publikováno v:
Technical and technological aspects of development and testing of new machinery and technologies for agriculture of Ukraine.
Autor:
Nazar V. Malyarchuk
Publikováno v:
Scientific works of National Aviation University. Series: Law Journal "Air and Space Law". 1
Autor:
Nazar V. Malyarchuk
Publikováno v:
Scientific works of National Aviation University. Series: Law Journal "Air and Space Law". 3
Autor:
Y. Sainte-Marie, R. Muller, J.-P. Landesman, A. Gerhardt, Jens W. Tomm, P. Galtier, V. Malyarchuk, J. Nagle
Publikováno v:
Journal of Applied Physics. 93:1354-1362
We compare a number of strain-sensitive spectroscopic techniques, namely, micro-Raman, micro-photoluminescence, photocurrent, and electroluminescence by applying them to two AlGaAs/GaAs high-power diode laser arrays, so-called “cm-bars.” Both dev
Autor:
Sungchul Hohng, Dongmok Kim, Ch. Lienau, Q-Han Park, Jong Wan Park, Young-Zoon Yoon, V. Malyarchuk, Jin-Gyu Kim
Publikováno v:
Journal of the Optical Society of Korea. 6:83-86
Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and i
Publikováno v:
Journal of Applied Physics. 92:2729-2733
We investigate optoelectronic properties of monolithically stacked diode lasers, so-called Nanostack® devices that include two nominally identical waveguide segments separated by a specially designed tunnel junction. Near-field optical microscopy pr
Autor:
A. Bärwolff, Jens W. Tomm, T. Günther, Markus Weyers, V. Malyarchuk, Eberhard Richter, Ch. Lienau, S. Gramlich, Andre Maaßdorf, Frank Brunner, D. Nickel, G. Trankle, Thomas Elsaesser, Yu. I. Mazur
Publikováno v:
Journal of Applied Physics. 91:5072-5078
Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that
Autor:
Günther Tränkle, Ch. Lienau, Markus Weyers, Andre Maaßdorf, Frank Brunner, Yu. I. Mazur, M. Jurisch, Jens W. Tomm, T. Günther, V. Malyarchuk, Eberhard Richter, S. Gramlich
Publikováno v:
Materials Science and Engineering: B. :25-28
We report photoluminescence decay time measurements in heavily Carbon-doped GaAs epilayers which are designed for the application in heterojunction bipolar transistors. These data provide access to carrier lifetimes that determine the current gains,
Autor:
Choi C; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Lee GJ; School of Electrical and Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea., Chang S; School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea., Song YM; School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.; AI Graduate School, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.; Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea., Kim DH; Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.; School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov; Vol. 36 (48), pp. e2412252. Date of Electronic Publication: 2024 Oct 14.
Autor:
C. Walther, G. Yu. Rudko, Uwe Müller, V. Malyarchuk, Z. Ya. Zhuchenko, Heiko Kissel, Yu. I. Mazur, William Ted Masselink, M. Ya. Valakh, G. G. Tarasov
Publikováno v:
Physical Review B. 61:8359-8362