Výsledky vyhledávání - "V. M. Vorotyntsev"

Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect

Autor: A. A. Shiryaev, E. L. Shobolov, V. M. Vorotyntsev

Publikováno v: Semiconductors. 54:518-522

The possibility of predicting the magnitude of the trapped charge in the buried oxide of silicon-on-insulator structures using the Poole–Frenkel effect is investigated. The conditions for the Poole–Frenkel effect in this layer are determined by m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bb57e958d3e3f0d2bde3112cd904904
https://doi.org/10.1134/s1063782620050127

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Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

Autor: A. A. Shiryaev, E. L. Shobolov, V. M. Vorotyntsev

Publikováno v: Semiconductors. 52:1114-1117

It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Po

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10d772c23fb93b4875e85e56449fe0cb
https://doi.org/10.1134/s1063782618090166

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Akademický článek

Fine purification of silane for removal of chlorosilanes by membrane gas separation.

Autor: Vorotyntsev, V.¹ vlad@vorotyn.nnov.ru, Drozdov, P.¹, Vorotyntsev, I.¹, Manokhina, S.¹, Knysh, S.¹

Publikováno v: Petroleum Chemistry. Dec2013, Vol. 53 Issue 8, p627-631. 5p.

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Formation of fluorine-containing defects and nanocrystals in SiO2 upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy

Autor: E. L. Shobolov, O. P. Gus’kova, Alexey Mikhaylov, David Tetelbaum, V. M. Vorotyntsev, N. D. Abrosimova

Publikováno v: Physics of the Solid State. 57:2164-2169

The incorporation of fluorine atoms into the silicon dioxide lattice upon F+ ion implantation and the formation of silicon (germanium) nanocrystals in SiO2 upon Si+ (Ge+) ion implantation have been numerically simulated. The calculations for F have b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::250a165a77a3dbd2c6373ce53e9a6bd6
https://doi.org/10.1134/s106378341511013x

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High purification of gases by diffusion through polymer membranes

Autor: V. M. Vorotyntsev

Publikováno v: Petroleum Chemistry. 55:259-275

Physicochemical principles of membrane separation as applied to high purification of gases have been surveyed. The influence of impurity concentration in the feed gas and the membrane material on the separation factor and the role of sorption effects

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b5bdea0f9fc4b9202216f7f00c96228
https://doi.org/10.1134/s0965544115040106

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