Zobrazeno 1 - 10
of 34
pro vyhledávání: '"V. M. Rubish"'
Autor:
A. I. Pogodin, M. M. Pop, I. O. Shender, I. P. Studenyak, M. J. Filep, T. O. Malakhovska, O. P. Kokhan, T. Y. Babuka, I. P. Stercho, V. M. Rubish, P. Kopčanský
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:21874-21889
Autor:
A. I. Pogodin, M. M. Pop, I. A. Shender, I. P. Studenyak, M. J. Filep, T. O. Malakhovska, O. P. Kokhan, T. Y. Babuka, L. M. Suslikov, V. M. Rubish
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:15054-15066
Publikováno v:
Реєстрація, зберігання і обробка даних. 22:7-18
The results on the analysis of methods for the formation of nanoscale elements on thin films of chalcogenide glassy semiconductors and their application to create optical diffraction elements are presented. When creating micro- and nanoelements of op
Publikováno v:
Реєстрація, зберігання і обробка даних. 22:3-11
Methods to create microrelief phase elements for diffractive optics and ophthalmology were analyzed. Direct laser writing, by a laser beam recorder used for master discs is an effective method for the formation of flat microrelief phase elements on t
Publikováno v:
Реєстрація, зберігання і обробка даних. 21:3-12
The results of the analysis of technologies of creation and properties of high-temperature reflective coatings for long-term storage media are presented. It is shown that promising materials for such coatings are thin films based on nitrides of trans
Autor:
A. G. Slivka, R. R. Rosul, A. V. Gomonnai, P. Huranych, V. M. Rubish, O. O. Gomonnai, P. P. Guranich
Publikováno v:
Phase Transitions. 92:508-516
Temperature and pressure dependences of dielectric characteristics of TlIn(S1−xSex)2 polycrystals for 0 ≤x≤ 0.15 are studied. Their phase (x, T) and (p, T) diagrams are built. With increasing Se co...
Autor:
A. A. Kryuchyn, A. A. Koptiukh, P. M. Lytvyn, M. L. Trunov, S. O. Kostyukevych, V. V. Petrov, V. M. Rubish, E. V. Belyak
Publikováno v:
Реєстрація, зберігання і обробка даних. 18:3-13
The analysis of methods of micro- and nanorelief structures recording at chalcogenide vitreous semiconductors films is presented. It is shown that exposing of the chalcogenide vitreous semiconductors films by optical radiation focused by diffraction
Autor:
V. M. Rubish, I. Petryshynets, F. Kováč, Yu. M. Azhniuk, A. V. Gomonnai, O. O. Gomonnai, Dietrich R. T. Zahn, Vasyl V. Lopushansky, S.M. Hasynets
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 18:248-254
Yu.M. Azhniuk is grateful to Deutscher Akademischer Austauschdienst (DAAD) for the support of his research at Chemnitz University of Technology.
Autor:
A. V. Gomonnai, Dietrich R. T. Zahn, V. M. Rubish, Yu. M. Azhniuk, O. O. Gomonnai, Vasyl V. Lopushansky
Publikováno v:
Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db39e11744c3d09163bfa5b76a020f7
https://doi.org/10.1142/9789813224537_0035
https://doi.org/10.1142/9789813224537_0035
Autor:
Yu. M. Azhniuk, O. O. Gomonnai, Dietrich R. T. Zahn, A. Villabona, V. M. Rubish, V.M. Marjan, A. V. Gomonnai
Publikováno v:
Journal of Non-Crystalline Solids. :36-40
(As 2 S 3 ) 0.45 (SbSI) 0.55 thin films were studied by Raman spectroscopy and atomic force microscopy. Laser-induced crystallization of SbSI crystallites from the amorphous (As 2 S 3 ) 0.45 (SbSI) 0.55 thin films was observed in micro-Raman measurem