Zobrazeno 1 - 10
of 12
pro vyhledávání: '"V. M. Phanse"'
Publikováno v:
Review of Scientific Instruments. 69:3251-3258
An ultrahigh vacuum scanning tunneling microscopy (STM) system capable of collecting constant-current STM images at rates exceeding 1 image/s at temperatures up to 900 K was designed, built, and tested. The microscope uses an inchworm to push a scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b566fd9c60a27de8a2466592a3d1c73d
https://doi.org/10.1063/1.1149224
https://doi.org/10.1063/1.1149224
Publikováno v:
Surface Science. 370:L149-L157
The adsorption, reaction and etching of Cu(100) by Cl 2 was studied using temperature programmed desorption (TPD) and low energy electron diffraction (LEED), and the results were compared with recent results for Br 2 . Although the general etching me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50361b9df899954b8a9a15530689abe
https://doi.org/10.1016/s0039-6028(96)01171-5
https://doi.org/10.1016/s0039-6028(96)01171-5
Publikováno v:
Applied Physics Letters. 74:2358-2360
Low-temperature (1.7–20 K) photoluminescence and reflectance are used to investigate the free and bound exciton and shallow impurity states in GaN. A 300-μm-thick GaN layer grown by hydride vapor phase epitaxy on sapphire(0001), with an exceptiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28cff3732e33fbaa2891266928a58406
https://doi.org/10.1063/1.123850
https://doi.org/10.1063/1.123850
Autor:
Robert P. Vaudo, V. M. Phanse, E. C. Piquette, Joan M. Redwing, Zvonimir Z. Bandic, T. C. McGill, P. M. Bridger
Publikováno v:
Applied Physics Letters. 74:1266-1268
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fd092f62b3622ac608bbf8a76f3e9d1
https://doi.org/10.1063/1.123520
https://doi.org/10.1063/1.123520
Publikováno v:
Applied Physics Letters. 73:3090-3092
The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebefd447e852dff82cdaa0038d1b2827
https://doi.org/10.1063/1.122682
https://doi.org/10.1063/1.122682
Publikováno v:
Applied Physics Letters. 73:1188-1190
The optical properties of n-type GaN grown by hydride vapor phase epitaxy, with intentional Si doping levels ranging from nominally undoped to ND−NA=4×1017 cm−3, are investigated using low temperature photoluminescence. We identify free and neut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41436d0393841c7ba7b7c878fb1ec5a6
https://doi.org/10.1063/1.122123
https://doi.org/10.1063/1.122123
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
The uniqueness of the nitrides for detectors lies in their wide bandgaps that can be tailored by varying the composition of the quaternary alloy AlInGaN. We report on the performance of GaN PIN photodiodes grown by MOVPE with various intrinsic region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff086b1915042916d4bc468f84e624aa
https://doi.org/10.1109/leos.1998.737882
https://doi.org/10.1109/leos.1998.737882
Publikováno v:
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C.
Solar-blind UV photodetectors have a number of applications including missile detection, flame sensing, and solar UV monitoring. The III-V nitrides are ideal for these applications due to their wide bandgaps, making detectors transparent to visible a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8db3405f157d32766ba5caca888ecf8
https://doi.org/10.1109/leosst.1997.619243
https://doi.org/10.1109/leosst.1997.619243
Autor:
Joan M. Redwing, P. M. Bridger, Zvonimir Z. Bandic, Robert P. Vaudo, T. C. McGill, R. A. Beach, E. C. Piquette, V. M. Phanse
Publikováno v:
MRS Proceedings. 512
The wide bandgap semiconductors GaN and AlGaN show promise for high voltage standoff layers in high power devices such as GaN Schottky rectifiers and GaN/AlGaN thyristorlike switches. The material properties which significantly influence the device d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::368c6636dd72f46782d38e26f1f1ab82
https://doi.org/10.1557/proc-512-27
https://doi.org/10.1557/proc-512-27
Publikováno v:
MRS Proceedings. 451
The etching of single crystal and polycrystalline Cu surfaces by halogens was studied using temperature programmed desorption (TPD), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). For Br2 and Cl2 on Cu(100) and polyc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15b417d7aa32337ec6d55ea7dd2effe4
https://doi.org/10.1557/proc-451-81
https://doi.org/10.1557/proc-451-81