Zobrazeno 1 - 10
of 21
pro vyhledávání: '"V. M. Mordvintsev"'
Publikováno v:
Russian Microelectronics. 51:255-263
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ad0c5fcc1b913acba377724ebc6a4b
https://doi.org/10.1134/s1063739722040096
https://doi.org/10.1134/s1063739722040096
Publikováno v:
Russian Microelectronics. 50:146-154
The object of research are samples of nonvolatile electrically alterable memory elements (memristors) based on TiN–TiO2–SiO2–W open “sandwich” structures, in which conductive nanostructures with electrically alterable characteristics are fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cacc70c078b052269feed17c6d522068
https://doi.org/10.1134/s1063739721020062
https://doi.org/10.1134/s1063739721020062
Publikováno v:
Russian Microelectronics. 49:269-277
Samples of nonvolatile electrically reprogrammable memory elements (memristors) based on electroformed TiN–TiO2–SiO2–W open sandwich structures, made using thin-film technology, are studied. A technique is developed and experimental studies are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c73581064dc86c2c4792cd31a16530b
https://doi.org/10.1134/s1063739720040058
https://doi.org/10.1134/s1063739720040058
Publikováno v:
Russian Microelectronics. 48:402-408
The dependences of the thickness of the TiO2 layer formed on the TiN surface on a partial pressure (flow) of oxygen in an argon-oxygen plasma of a magnetron sputtering system are established by secondary-ion mass spectrometry. The obtained dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d2d50dcda95c7b45a6eedd1982c599
https://doi.org/10.1134/s1063739719060064
https://doi.org/10.1134/s1063739719060064
Publikováno v:
Technical Physics. 63:1629-1635
Based on experimental data for electroforming in open TiN–SiO2–W sandwich structures (the end face of d = 10–30-nm-thick SiO2 films exposed to vacuum served as an insulating trench), it has been shown that the voltage at which conducive particl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be6719cee12d7f5ef5714454c33027e2
https://doi.org/10.1134/s106378421811018x
https://doi.org/10.1134/s106378421811018x
Autor:
S. E. Kudryavtsev, V. M. Mordvintsev
Publikováno v:
Russian Microelectronics. 46:243-251
It is experimentally shown that the introduction of an additional dielectrical layer several nanometers thick (more than 2.5 and 1.3 nm for TiO2 and SiO2, respectively) into open TiN–SiO2–W and Si–SiO2–W “sandwich”-structures on their ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f9cc7603177aa2e61b2f9d10a547e1
https://doi.org/10.1134/s1063739717040060
https://doi.org/10.1134/s1063739717040060
Publikováno v:
Russian Microelectronics. 45:242-255
Using secondary ion mass spectrometry, we investigate the oxidation of titanium nitride films fabricated by reactive magnetron sputtering under specific conditions of burning plasma in the argon and oxygen mixture in a vacuum chamber of a magnetron s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af0d194d53f15a2c14f384906bea3ba5
https://doi.org/10.1134/s1063739716040065
https://doi.org/10.1134/s1063739716040065
Publikováno v:
Technical Physics. 60:1376-1383
We report on the results of numerical simulation of the effect of electric field redistribution in the insulating gap of the open TiN–SiO2–W metal–insulator–metal “sandwich” structure upon the formation of an insulating film layer with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0349a3611cc2b9a0b656712fa33dfc
https://doi.org/10.1134/s1063784215090133
https://doi.org/10.1134/s1063784215090133
Autor:
V. M. Mordvintsev, S. E. Kudryavtsev
Publikováno v:
Russian Microelectronics. 42:68-78
The results of experimental investigations of electroforming and quasi-static current-voltage (I-V) characteristics of formed TiN-SiO2-W open sandwich structures in comparison to the Si-SiO2-W structures are presented. It is shown that similar memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43c097352c1d18a3093d8952b8e5e7f
https://doi.org/10.1134/s1063739713010034
https://doi.org/10.1134/s1063739713010034
Publikováno v:
Russian Microelectronics. 40:87-97
The results of the experimental investigation of the radiation behavior of cells with the use of the electroformed open Si-SiO2-W sandwich structures as memory cells are presented. Information in these structures is coded by the width of a nanometer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407944aea5d9e0b7744692f859edaee7
https://doi.org/10.1134/s1063739711020077
https://doi.org/10.1134/s1063739711020077