Zobrazeno 1 - 10
of 53
pro vyhledávání: '"V. M. Mikoushkin"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:884-889
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb18ac018c487a74025f6b1eacfe8e1
https://doi.org/10.1134/s1027451022050342
https://doi.org/10.1134/s1027451022050342
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:759-763
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a47d6c4348343dc66dcc68e28323e3
https://doi.org/10.1134/s1027451022050196
https://doi.org/10.1134/s1027451022050196
Publikováno v:
Journal of Materials Science. 56:15180-15187
A photovoltaic effect was observed under exposure to 810-nm laser light on the atomically clean surface of an n-GaAs wafer etched with Ar+ ions: open-circuit voltage in current–voltage (J–V) light characteristics was as high as 47 mV. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177dddbcbca3d148f92e3915d5274679
https://doi.org/10.1007/s10853-021-06273-7
https://doi.org/10.1007/s10853-021-06273-7
Autor:
V. M. Mikoushkin
Publikováno v:
JETP Letters. 112:764-768
The excitation spectrum of GaAs has been studied by reflection electron energy loss spectroscopy. In addition to dominant collective excitations, a series of single-electron transitions of a core Ga 3d electron to previously unknown unoccupied states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4b045cab5e58de56c7d3dbaa2379c
https://doi.org/10.1134/s0021364020240078
https://doi.org/10.1134/s0021364020240078
Publikováno v:
Semiconductors. 54:1702-1705
The core-level and valence band electronic structure of the n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy after irradiation by an Ar+ ion beam with energy Ei = 1500 eV and fluence Q = 1 × 1015 ions/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e3b62a5394bc3fb239682a98552e6af
https://doi.org/10.1134/s1063782620120222
https://doi.org/10.1134/s1063782620120222
Publikováno v:
Semiconductors. 53:1922-1925
A highly defective ~10-nm-thick layer was fabricated in a high vacuum by 2.5 keV Ar+ ion bombardment of the n-GaAs surface. Valence band photoelectron spectra showed a p-type conductivity of the layer arising due to the high concentration of mechanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::487596f9c41a4ce607a4f08bcfcbc6b2
https://doi.org/10.1134/s1063782619140136
https://doi.org/10.1134/s1063782619140136
Publikováno v:
Semiconductors. 53:1918-1921
Oxidation specific of the defected GaAs has been considered on the basis of elemental and chemical composition study of the oxide layer naturally emerged on the GaAs surface strongly irradiated by Ar+ ions with energy Ei = 3000 eV and fluence Q ~ 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f4a9982672451f4efd1d4db5919529e
https://doi.org/10.1134/s1063782619140124
https://doi.org/10.1134/s1063782619140124
Autor:
E. I. Shek, E. V. Fomin, A. E. Kalyadin, K. V. Karabeshkin, A. D. Bondarev, E. V. Sherstnev, V. I. Sakharov, N. A. Sobolev, V. M. Mikoushkin, I. T. Serenkov
Publikováno v:
Semiconductors. 53:415-418
The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent annealing are studied. The ion energies and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31cce08a6a22b622f87b193b0ea65dbe
https://doi.org/10.1134/s1063782619040250
https://doi.org/10.1134/s1063782619040250
Publikováno v:
Applied Surface Science. 577:151909
The electronic structure and chemical composition of the n-GaAs surface after implantation of N2+ ions with energy Ei = 3000 eV and fluence Q ∼ 3 × 1015 cm-2 were studied by synchrotron-based X-ray photoelectron spectroscopy to clarify effects of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea49f1af13f32b34395fe3dd2ed86fd
https://doi.org/10.1016/j.apsusc.2021.151909
https://doi.org/10.1016/j.apsusc.2021.151909
Autor:
V. M. Mikoushkin
Publikováno v:
Semiconductors. 52:2061-2064
An approach to solving the problem of the in situ bandgap determination in the extremely thin and chemically active nitride nanolayers fabricated in high vacuum on the n-GaAs surface has been suggested. The approach is based on measuring the interban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cb062d5682b4ac4662fbf10d629bc5
https://doi.org/10.1134/s1063782618160200
https://doi.org/10.1134/s1063782618160200