Zobrazeno 1 - 10
of 21
pro vyhledávání: '"V. M. Mikheev"'
Autor:
V. M. Mikheev
Publikováno v:
Low Temperature Physics. 45:123-127
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb21855d662a118727f8205d49fb3a4
https://doi.org/10.1063/1.5082323
https://doi.org/10.1063/1.5082323
Autor:
V. M. Mikheev
Publikováno v:
Low Temperature Physics. 43:499-503
The impact of illumination on the mobility of 2D electrons during scattering by a non-equilibrium correlated distribution of impurity atoms is investigated, based on the example of the AlxGa1-xAs/GaAs heterostructure. It is shown that sample backligh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea4fab1e7551238c088ff630114f95f9
https://doi.org/10.1063/1.4983694
https://doi.org/10.1063/1.4983694
Influence of the form of structure factor on the mobility of nondegenerate two-dimensional electrons
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 56:546-553
The temperature dependences of the mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions in AlxGa1 − xAs/GaAs heterostructures have been investigated. The cases where the influence of the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d957b689b73f42d4137866a358e01dbb
https://doi.org/10.1134/s1063783414030202
https://doi.org/10.1134/s1063783414030202
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 55:559-566
The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the AlxGa1 − xAs/GaAs heterostructure as an example.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cd9bbd0d1d243a1d2ff09fe6b235ccf
https://doi.org/10.1134/s1063783413030219
https://doi.org/10.1134/s1063783413030219
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 54:1451-1458
The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a spacer of arbitrary width have been investigated using the AlxGa1 − xAs/GaAs heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2991f241ba9c7ad37607099670a4070e
https://doi.org/10.1134/s106378341207027x
https://doi.org/10.1134/s106378341207027x
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 53:2210-2219
Spatial correlations of impurity ions in doped thin layers at finite temperatures have been considered in the model of hard spheres on a plane. It has been shown that, in systems with separate doping, the correlations in the arrangement of impurity i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6624d593d1d78cc54c5ab85a67bd05
https://doi.org/10.1134/s1063783411110187
https://doi.org/10.1134/s1063783411110187
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 53:864-871
The spatial correlations of impurity ions in doped thin layers have been considered. A model of hard spheres on the plane has been developed for describing the correlations. In this model, an analytical expression has been obtained for the structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588e38d631297a77e1fb083aaec85c2f
https://doi.org/10.1134/s106378341104024x
https://doi.org/10.1134/s106378341104024x
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 50:1957-1963
The concentration dependences of the mobility of two-dimensional electrons in heterostructures with selective doping are investigated. Correlations of impurity ions in the volume of the doped layer are considered. The structure factor, which characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974e5a853c98f55e855cefbfccf97293
https://doi.org/10.1134/s1063783408100284
https://doi.org/10.1134/s1063783408100284
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 45:236-239
The 200-fold increase in the thermal resistance of ZnSe at 15 K caused by doping of these crystals with nickel is accounted for by suppression of the thermal phonon contribution to thermal conductivity. As follows from our calculations, in order to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb88b48c64f7431841f2da9cd5da29a
https://doi.org/10.1134/1.1553523
https://doi.org/10.1134/1.1553523
Autor:
V. M. Mikheev
Publikováno v:
Physics of the Solid State. 43:1860-1866
The spatial correlations in the arrangement of iron ions in HgSe: Fe compounds are described by the pair correlation function calculated within the hard sphere model. The temperature effect is taken into account by substituting the thermodynamic mean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10dc9c921adc95a9b4ec72cd0372d419
https://doi.org/10.1134/1.1410623
https://doi.org/10.1134/1.1410623