Zobrazeno 1 - 10
of 14
pro vyhledávání: '"V. M. Lukashin"'
Autor:
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Shcherbakov
Publikováno v:
Technical Physics Letters. 47:329-332
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba0fbe5cb3118a12005ef0bcb3e53ae
https://doi.org/10.1134/s1063785021040052
https://doi.org/10.1134/s1063785021040052
Autor:
V. G. Lapin, D. V. Gulyaev, A. K. Bakarov, A. B. Pashkovskii, K. S. Zhuravlev, V. M. Lukashin, D. Yu. Protasov, A. I. Toropov
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:478-484
A new type of AlGaAs/InGaAs/GaAs heterostructures with energy barriers formed in the AlGaAs transistor layers adjacent to the InGaAs channel, modulation-doped with donors and acceptors is presented. The height of the barriers associated with the pote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5781f431bbe382ca7835ee3a9d40e23
https://doi.org/10.3103/s8756699020050155
https://doi.org/10.3103/s8756699020050155
Publikováno v:
Russian Microelectronics. 49:195-209
A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrodinger and Poisson equations and a syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b242bb927b8aa166c5b3e9311bb850
https://doi.org/10.1134/s1063739720030051
https://doi.org/10.1134/s1063739720030051
Autor:
V. M. Lukashin, N. K. Pristupchik, M. I. Lopin, I. V. Kulikova, V. G. Lapin, L. V. Manchenko, V. G. Kalina, A. D. Zakurdaev, A. B. Pashkovskii
Publikováno v:
Technical Physics. 64:220-225
Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0ba85ac31b80cda0cc61f5eeb592d8
https://doi.org/10.1134/s1063784219020154
https://doi.org/10.1134/s1063784219020154
Publikováno v:
Technical Physics Letters. 44:804-807
A simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrodinger and Poisson equations and the hydrodynamic system o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ddd2b9627a8c7115239cfa4bc5dc51
https://doi.org/10.1134/s1063785018090092
https://doi.org/10.1134/s1063785018090092
Publikováno v:
Technical Physics Letters. 43:562-566
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530740d4caefcd7e65af6476cd0fc500
https://doi.org/10.1134/s1063785017060232
https://doi.org/10.1134/s1063785017060232
Autor:
K. S. Zhuravlev, S. V. Shcherbakov, A. A. Borisov, A. A. Makovetskaya, N. D. Ursulyak, A. I. Toropov, S. S. Zyrin, V. I. Novoselets, V. M. Lukashin, A. B. Pashkovskii, V. G. Lapin
Publikováno v:
Technical Physics Letters. 42:848-851
Small-signal characteristics of pseudomorphic high-electron-mobility transistors based on donor–acceptor doped heterostructures (DA-pHEMTs) are compared to those of analogous transistors (pHEMTs) based on traditional heterostructures without accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2292e304e91b40f904d9ac114bc12a7
https://doi.org/10.1134/s1063785016080198
https://doi.org/10.1134/s1063785016080198
Autor:
A. B. Pashkovskii, S. V. Shcherbakov, A. I. Toropov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. A. Kapralova
Publikováno v:
Technical Physics Letters. 41:142-145
The first results obtained in engineering research into power heterostructure field-effect transistors operating under zero gate bias are detailed. At a frequency of 10 GHz in pulse mode under gate voltages ranging from −0.2 to +0.2 V, transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aaf29c4d26a8dcd13f5e191afb3934d
https://doi.org/10.1134/s106378501502008x
https://doi.org/10.1134/s106378501502008x
Autor:
A. I. Toropov, A. B. Pashkovskii, A. A. Kapralova, V. M. Lukashin, E. I. Golant, K. S. Zhuravlev, V. G. Lapin
Publikováno v:
Semiconductors. 48:666-674
We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::051879bf62bfeaa5cb0bc807cdeb1c14
https://doi.org/10.1134/s1063782614050121
https://doi.org/10.1134/s1063782614050121
Autor:
K. S. Zhuravlev, V. M. Lukashin, A. B. Pashkovskii, V. G. Lapin, A. B. Sokolov, A. I. Toropov
Publikováno v:
Technical Physics Letters. 38:819-821
We present the first results of development of high-power field-effect transistors (FETs) based on a GaAs heterostructure with quantum well and additional potential barriers optimized to reduce the role of transverse spatial electron transport, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af231b8dcd0138db387523bf17336946
https://doi.org/10.1134/s1063785012090088
https://doi.org/10.1134/s1063785012090088