Zobrazeno 1 - 10
of 43
pro vyhledávání: '"V. M. Lantratov"'
Autor:
N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, V. M. Andreev
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of r
Externí odkaz:
https://doaj.org/article/cbf0c45c75b84d88977dc4ccd7fb5a19
Autor:
V. M. Andreev, V. V. Evstropov, Mikhail V. Lebedev, A. A. Usikova, V. P. Ulin, V. M. Lantratov, N. M. Lebedeva
Publikováno v:
Technical Physics. 59:879-883
A correlation between the main parameter of a solar cell, the conversion efficiency, and its dark I–V characteristic is investigated. A formula is derived that expresses an increment (decrement) of the efficiency through a decrement (increment) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0eee7fd523743dee12fb369eb2c548
https://doi.org/10.1134/s1063784214060152
https://doi.org/10.1134/s1063784214060152
Autor:
N. A. Kalyuzhnyy, M. A. Mintairov, V. M. Lantratov, S. A. Mintairov, M. Z. Shvarts, N. Kh. Timoshina, R. A. Salii, V. V. Evstropov
Publikováno v:
Semiconductors. 48:653-658
The paper is focused on the fundamental loss in the nongenerating (residual) part of multi-junction solar cells. A method for determining the current-voltage characteristic of the residual part of solar cells is suggested and substantiated. The metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ed34c7cb8d1fcc000b6a0c2eb55caf
https://doi.org/10.1134/s1063782614050133
https://doi.org/10.1134/s1063782614050133
Autor:
V. M. Lantratov, S. A. Mintairov, S. G. Konnikov, N. A. Kalyuzhnyy, M. E. Rudinsky, Pavel N. Brunkov, R. V. Sokolov, N. Yu. Gordeev, A. A. Gutkin, V. V. Goncharov
Publikováno v:
Semiconductors. 47:1170-1173
The method of scanning Kelvin-probe microscopy is used to show that the effect of triboelectrification is observed when the tip of an atomic-force microscope interacts with the surface of n-GaAs epitaxial layers. The sign of the change in the potenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f48fa385764c04b9fb54e6b1dc32fe
https://doi.org/10.1134/s1063782613090054
https://doi.org/10.1134/s1063782613090054
Autor:
N. A. Kalyuzhnyi, V. M. Lantratov, M. Z. Shvartz, N. Kh. Timoshina, M. A. Mintairov, C. A. Mintairov, V. V. Evstropov
Publikováno v:
Semiconductors. 46:1051-1058
A method for determining the series resistance R s of multijunction solar cells is suggested and sub-stantiated. The method uses the presence of a maximum in the dependence of the efficiency on the sunlight concentration ratio η(X) or in that of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8ccd1469329b8ea1928ffb9ce9ee0f1
https://doi.org/10.1134/s1063782612080143
https://doi.org/10.1134/s1063782612080143
Autor:
Maxim Z. Shvarts, N. Kh. Timoshina, S. A. Mintairov, N. A. Kalyuzhnyy, Alexander S. Gudovskikh, V. V. Evstropov, V. M. Andreev, V. M. Lantratov
Publikováno v:
Semiconductors. 44:1520-1528
Photovoltaic converters based on nGaInP/ n-pGe heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrowgap subcells of the GaInP/GaInAs/Ge threeju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24af6e4ac8b0b746efc46281170c37dd
https://doi.org/10.1134/s106378261011028x
https://doi.org/10.1134/s106378261011028x
Autor:
M. Z. Shvarts, N. A. Kalyuzhnyy, S. A. Mintairov, V. M. Emelyanov, N.K. Timoshina, V. M. Lantratov, V. M. Andreev
Publikováno v:
Semiconductors. 44:1084-1089
A technique for determining a minority carrier’s diffusion length in photoactive III–V layers of solar cells by approximating their spectral characteristics is presented. Single-junction GaAs, Ge and multi-junction GaAs/Ge, GaInP/GaAs, and GaInP/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f2b9af8568959b508eb51d79dffcd5
https://doi.org/10.1134/s1063782610080233
https://doi.org/10.1134/s1063782610080233
Publikováno v:
Semiconductors. 43:644-651
Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dac01141332f5b389a09aa7ef221dee
https://doi.org/10.1134/s1063782609050200
https://doi.org/10.1134/s1063782609050200
Autor:
James L. Merz, N. A. Kalyuzhnyy, S. A. Mintairov, Y. He, V. M. Lantratov, Alexander Mintairov, Y. Chu
Publikováno v:
Physics Letters A. 373:1185-1188
Using wafer bonding (WB) and wet oxidation (WO) techniques, GaInP microdisks having an asymmetric waveguide (diameters D = 1 – 3 μm ) with embedded InP quantum dots (size/density ∼100 nm/ ∼ 10 9 cm − 2 ) have been fabricated on Si and GaAs s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f301e218156950e14491e435630901c
https://doi.org/10.1016/j.physleta.2009.02.003
https://doi.org/10.1016/j.physleta.2009.02.003
The effect of damaging radiation (p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions
Publikováno v:
Semiconductors. 41:732-736
The properties of multiple-junction solar cells depend on the properties of the constituent photovoltaic and tunneling p-n junctions. In this study, the properties of the space-charge region for photovoltaic and tunneling p-n junctions were examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7d8ad069713b2d7c4883abb158deae
https://doi.org/10.1134/s1063782607060231
https://doi.org/10.1134/s1063782607060231