Výsledky vyhledávání - "V. M. Konnov"

Emission from rare-earth centers in (ZnTe:Yb):O/GaAs

Autor: Yu. G. Sadof’ev, E. I. Makhov, N. N. Loiko, V. M. Konnov, A. S. Trushin

Publikováno v: Semiconductors. 36:1215-1220

Layers of Yb-doped ZnTe were grown by molecular-beam epitaxy, and the photoluminescence of ZnTe:Yb structures was studied. It was found that additional doping with O should be performed to activate emission from Yb ions. The necessary conditions for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19934c5d11178d0629d0ee1443e09ebe
https://doi.org/10.1134/1.1521218

Zobrazit plný text záznamu

Photoluminescence of Yb Doped ZnTe

Autor: Yu. G. Sadofyev, E. I. Makhov, A. A. Gippius, A. S. Trushin, N. N. Loiko, V. M. Konnov

Publikováno v: physica status solidi (b). 229:317-321

The photoluminescence from ZnTe : Yb films grown on (100) GaAs by MBE was studied at different temperatures (4.2-350) K. The efficient Yb 3+ -related emission in ZnTe was observed up to room temperature. The analysis of the fine structure of the Yb l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7dcb463e61c54f68469b3ede20ae2ce9
https://doi.org/10.1002/1521-3951(200201)229:1<317::aid-pssb317>3.0.co

Zobrazit plný text záznamu

Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs

Autor: N. N. Loyko, V. M. Konnov, T. V. Larikova, Nikolai A. Sobolev, V. A. Dravin, V. V. Ushakov, I. P. Kazakov, A.A. Gippius

Publikováno v: Materials Science Forum. :917-922

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::940d1bd27374683b1fff90d785984bd5
https://doi.org/10.4028/www.scientific.net/msf.258-263.917

Zobrazit plný text záznamu

Yb luminescence in ion-implanted GaAs

Autor: V. A. Dravin, A. A. Gippius, N. N. Loyko, V. M. Konnov, T. V. Larikova, V. V. Ushakov

Publikováno v: Solid State Communications. 96:839-842

Optical activation of Yb in GaAs was achieved by co-implantation of Yb and group VI elements (O,S,Se,Te). Efficient luminescence complexes “Yb+O+S/Se/Te” showed systematic increase of transition energy with the increase of chalcogen atom size and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ac56b2fe3e23a8d9809ac2dd593e13c
https://doi.org/10.1016/0038-1098(95)00582-x

Zobrazit plný text záznamu

Luminescent rare-earth complexes in ion-implanted GaAs

Autor: N. N. Loyko, A. A. Gippius, V. A. Dravin, V. M. Konnov, T. V. Larikova, V. V. Ushakov

Publikováno v: Scopus-Elsevier

Interaction of rare earth element Yb with oxygen and chalcogenide (S, Se, Te) co-dopants in thin ion-implanted GaAs layers was found to produce efficient luminescence complexes Yb+O+S/Se/Te with systematic increase of transition energy with the incre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fdf22d8f521bd649af9307c416b4256
https://doi.org/10.1117/12.229155

Zobrazit plný text záznamu

Activation of Yb Luminescence in GaAs by Group VI Elements Codoping

Autor: N. N. Loyko, V. A. Dravin, V. V. Ushakov, V. M. Konnov, T. V. Larikova, A. A. Gippius

Publikováno v: Scopus-Elsevier

Yb in GaAs is generally believed to be optically inactive due to very low fraction of Yb in substitutional position. In the present work it is demonstrated that Yb can be rendered optically active in GaAs if it is incorporated in three-component comp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa5bfe1caeccf01cdb8201d132fa54b
https://doi.org/10.1557/proc-422-187

Zobrazit plný text záznamu

Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy

Autor: Yu. G. Sadofyev, V. M. Konnov, A. A. Gippius, N. N. Loiko

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1492

Yb-doped ZnTe layers grown on GaAs substrates have been obtained using molecular beam epitaxy. A study of photoluminescence of ZnTe:Yb/GaAs structures is performed. It is demonstrated that Yb can be rendered optically active in ZnTe if it is incorpor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8488fa829491d7970c260584eb28baa1
https://doi.org/10.1116/1.1377589

Zobrazit plný text záznamu

Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond

Autor: V. M. Konnov, A. A. Gippius, V. V. Ushakov, S.A. Kazarian, V. Vavilov, A.A. Shirokov, V.N. Jakimkin, N. A. Rzakuliev

Publikováno v: Materials Science Forum. :1195-1200

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d724204c904a365a6b860068d3180e24
https://doi.org/10.4028/www.scientific.net/msf.10-12.1195

Zobrazit plný text záznamu

Luminescence of Pr, Nd and Yb ions implanted in GaAs and GaP

Autor: J. Oswald, J. Pastrňák, A. A. Gippius, V. M. Konnov, V. N. Yakimkin, N. A. Rzakuliev, V. V. Ushakov

Publikováno v: Czechoslovak Journal of Physics. 38:1288-1293

New experimental data on luminescence spectra of Pr and Nd ions implanted into GaAs and GaP crystals and the results on luminescence kinetics of Nd doped GaP are presented. The results show that RE ions form different complexes in measured samples.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de4735ec887fec08d5753fdb250aff8c
https://doi.org/10.1007/bf01597299

Zobrazit plný text záznamu

Photoelectric properties of silver bromide–semiconductor structures

Autor: V. Zhelev, G. Todorov, V. M. Konnov, A. A. Sokolova, A. F. Plotnikov

Publikováno v: Physica Status Solidi (a). 17:185-190

An investigation is made of the silver bromide–semiconductor interface. It is shown that AgBrSi and AgBrGaAs structures are typical heterojunctions. A redistribution of charge on both sides of the interface and a charge accumulation may be realized

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49a5ab300d3fec041bb3410b89eca158
https://doi.org/10.1002/pssa.2210170120

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání