Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V. M. Katerynchuk"'
Autor:
V. M. Katerynchuk, B. V. Kushnir, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, O. S. Litvin
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 507-510 (2017)
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide
Externí odkaz:
https://doaj.org/article/dfff7e335499418cb91dd3409808937e
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 507-510 (2017)
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::349579ea90271761e2559f528ca39bd6
http://journals.pu.if.ua/index.php/pcss/article/view/1232
http://journals.pu.if.ua/index.php/pcss/article/view/1232
Autor:
Zakhar R. Kudrynskyi, V. V. Khomyak, V. V. Netyaga, Zakhar D. Kovalyuk, B. V. Kushnir, V. M. Katerynchuk
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 50-54 (2015)
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO — p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa4bdadf3de5de726252b771b82afb6e
http://www.tkea.com.ua/tkea/2015/5-6_2015/pdf/09.pdf
http://www.tkea.com.ua/tkea/2015/5-6_2015/pdf/09.pdf
Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0bf504e49198db2c74e270f2908c935
http://dspace.nbuv.gov.ua/handle/123456789/136716
http://dspace.nbuv.gov.ua/handle/123456789/136716
Autor:
Zakhar D. Kovalyuk, Zakhar R. Kudrynskyi, V. V. Netyaga, V. V. Khomyak, I. G. Orletsky, V. M. Katerynchuk
Publikováno v:
Acta Physica Polonica A. 124:720-723
Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the rst time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin lms onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8caf07b2847dc3e2bee6defcefbec20f
https://doi.org/10.12693/aphyspola.124.720
https://doi.org/10.12693/aphyspola.124.720
Publikováno v:
Semiconductors. 47:345-348
The optical size effect in In2O3 surface-nanostructured films is detected thanks to the study of the photoelectric properties of In2O3-p-InSe heterostructures with an anisotropic substrate. When fabricating such structures, the intrinsic oxide surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe076c44e2feece8a2b4e6950dcb6e7
https://doi.org/10.1134/s1063782613030135
https://doi.org/10.1134/s1063782613030135
Autor:
Zakhar D. Kovalyuk, V. M. Katerynchuk
Publikováno v:
Inorganic Materials. 47:749-752
Experimental evidence is presented that air oxidation of InSe crystals produces a native oxide layer which possesses not dielectric but conductive properties and is separated from the semiconductor substrate by a potential barrier. The surface resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb577495aa298731f60af79711fe24d
https://doi.org/10.1134/s0020168511060124
https://doi.org/10.1134/s0020168511060124
Publikováno v:
Semiconductors. 48:776-778
The temperature dependence of the photopleochroism coefficient for a native oxide-p-InSe heterojunction is studied. Different temperature dependences of the shift of the photocurrent long-wavelength edge are recorded for two polarization orientations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4ccda433397a02011d86bc974571bb
https://doi.org/10.1134/s1063782614060153
https://doi.org/10.1134/s1063782614060153
Autor:
V. M. Katerynchuk, M. Z. Kovalyuk
Publikováno v:
Semiconductors. 44:1176-1179
The results of investigation of electric properties of oxide-p-InSe and oxide-p-In4Se3 heterojunctions, the front layer in which is obtained by the thermal oxidation of crystalline substrates, are presented. It is established that the forward portion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49ba48d4705308a8dd1930a8af40665f
https://doi.org/10.1134/s1063782610090125
https://doi.org/10.1134/s1063782610090125
Publikováno v:
Superlattices and Microstructures. 44:416-419
Changes in the surface topology of GaSe crystals caused by their oxidization are investigated by the atomic force microscopy method. The nucleation of a new phase of Ga2O3 intrinsic oxide takes place due to the formation of close arrays of nanoneedle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334b9f305e7a73db2bf3d899e3a8607a
https://doi.org/10.1016/j.spmi.2008.06.006
https://doi.org/10.1016/j.spmi.2008.06.006