Zobrazeno 1 - 5
of 5
pro vyhledávání: '"V. M. Karsten"'
Autor:
G. G. Gartvich, V. M. Karsten, O. I. Semenova, V. G. Shchukin, R. G. Sharafutdinov, V. O. Konstantinov
Publikováno v:
Plasma Physics Reports. 36:1278-1283
The results of experimental studies concerned with deposition of solar-grade silicon from monosilane in the electron-beam plasma are reported. With the laboratory equipment, the silicon deposition rate attains up to 40 g h−1 at the expenditure of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daf44e12ba0129a1e451b91b6d55d16
https://doi.org/10.1134/s1063780x10130313
https://doi.org/10.1134/s1063780x10130313
Autor:
A. R. Evseev, B. V. Tarasov, D. M. Markovich, A. V. Bobylev, V. M. Karsten, Sergey Alekseenko
Publikováno v:
AIChE Journal. 54:1424-1430
The thickness of a liquid film on the structured packing inside a distillation column was measured at the region of counter-current flow of gas and liquid by fiber-optic sensors. The local distribution of liquid inside a typical geometrical cell form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de7cb32ca2e632f23568f8de5e97ae8
https://doi.org/10.1002/aic.11498
https://doi.org/10.1002/aic.11498
Autor:
A. R. Evseev, A. V. Bobylev, V. M. Karsten, Sergei V. Alekseenko, B. V. Tarasov, D. M. Markovich
Publikováno v:
Theoretical Foundations of Chemical Engineering. 41:417-423
Reflective fiber optic sensors are used to measure the thickness of a liquid film on geometrically complex surfaces inside a distillation column with a structured packing and countercurrent flow of gas and liquid. Distributions of the liquid-film thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e62cfeb8ecab34b1e6842b6e85163188
https://doi.org/10.1134/s0040579507040136
https://doi.org/10.1134/s0040579507040136
Autor:
S.Ya. Khmel, Alexander G. Cherkov, R. G. Sharafutdinov, V. M. Karsten, O.I. Semenova, Anton K. Gutakovskii, L.D. Pokrovsky
Publikováno v:
Surface and Coatings Technology. :1178-1181
We discuss a new method for low temperature epitaxial growth of silicon films by gas-jet electron beam plasma chemical vapor deposition in SiH 4 –Ar mixture. The growth rate up to 0.8 μm/min becomes possible at the substrate temperature below 650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a21ca69d9e6fb5dd5e0e5be11d78482
https://doi.org/10.1016/s0257-8972(03)00452-3
https://doi.org/10.1016/s0257-8972(03)00452-3
Autor:
B. V. Tarasov, Sergei V. Alekseenko, V. M. Karsten, D. M. Markovich, A. R. Evseev, A. V. Bobylev
Publikováno v:
Instruments and Experimental Techniques. 46:260-264
A technique for measuring the frequency responses of the thickness of a film of liquid at difficultly accessed locations and on intricately shaped objects has been developed on the basis of reflection-type fiber-optic sensors. The static, dynamic, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be5a1846a6bbba040f45ce5f5fff60f
https://doi.org/10.1023/a:1023650623759
https://doi.org/10.1023/a:1023650623759