Zobrazeno 1 - 10
of 79
pro vyhledávání: '"V. M. Kalygina"'
Autor:
V. I. Nikolaev, A. V. Almaev, Yu. S. Petrova, I. A. Pechnikov, V. M. Kalygina, A. V. Tsymbalov, P. N. Butenko, V. V. Kopyev
Publikováno v:
Semiconductors. 54:1224-1229
The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is studied. Both types of Ga2O3 films are obtained by hydride vapor phase epitaxy on smooth and pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976426483b220fc65a78ee30b9806783
https://doi.org/10.1134/s1063782620100152
https://doi.org/10.1134/s1063782620100152
Autor:
P. N. Butenko, A. V. Almaev, Yu. S. Petrova, I. A. Pechnikov, V. M. Kalygina, V. I. Nikolaev, A. V. Tsymbalov
Publikováno v:
Technical Physics Letters. 46:867-870
The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga2O3) films is discussed. Ga2O3 films were deposited by the method of halide vapor phase epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c83f16f2bf10ed7dfb523818936f99d
https://doi.org/10.1134/s1063785020090060
https://doi.org/10.1134/s1063785020090060
Publikováno v:
Russian Physics Journal. 63:882-887
The electrical and photoelectrical characteristics of Ga2O3/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c5b4629b01112202b6cbb858b9906ff
https://doi.org/10.1007/s11182-020-02112-5
https://doi.org/10.1007/s11182-020-02112-5
Publikováno v:
Semiconductors. 54:682-686
Resistive-type structures based on gallium-oxide films are studied. The Ga2O3 films are produced by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with preliminarily deposited platinum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e8db19d443d4df39b80bfb430011820
https://doi.org/10.1134/s1063782620060093
https://doi.org/10.1134/s1063782620060093
Publikováno v:
Technical Physics Letters. 46:480-483
The influence of operating modes on the response of ammonia sensors based on tin dioxide films has been studied. Samples have been obtained as a result of high-frequency magnetron sputtering of a SnO2:Sb target on sapphire substrates with predeposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0efe805439a8e567e19caf2dfcac96a
https://doi.org/10.1134/s1063785020050284
https://doi.org/10.1134/s1063785020050284
Publikováno v:
Semiconductors. 53:452-457
The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d7880959f1f881793f9ad3c6a292ef
https://doi.org/10.1134/s1063782619040122
https://doi.org/10.1134/s1063782619040122
Autor:
T. M. Yaskevich, V. A. Novikov, V. M. Kalygina, Yu. S. Petrova, T. Z. Lygdenova, A. V. Tsymbalov
Publikováno v:
Semiconductors. 53:388-394
The properties of gallium-oxide films produced by the radio-frequency magnetron-assisted sputtering of a β-Ga2O3 target with deposition onto sapphire substrates are studied. The as-deposited gallium-oxide films are polycrystalline and contain crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3052c58967b979cfbf6a83a17e0697
https://doi.org/10.1134/s1063782619030096
https://doi.org/10.1134/s1063782619030096
Publikováno v:
Semiconductors. 2021. Vol. 55, № 3. P. 341–345
The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magnetron-assisted sputtering of a Ga2O3 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d59232e3099bf59366f4fe9575206aea
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901896
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901896
Publikováno v:
Semiconductors. 2018. Vol. 52, № 2. P. 143-149
The effect of annealing in argon at temperatures of T an = 700–900°C on the I–V characteristics of metal–Ga2O3–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 powder onto GaAs wafers with a donor conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e89103ef3ac8364e0c47535439037846
https://doi.org/10.1134/s1063782618020045
https://doi.org/10.1134/s1063782618020045
Publikováno v:
Physica status solidi. 2022. Vol. 259, № 2. P. 2100341 (1-6)
Herein, the electrical and photoelectric characteristics of solar-blind UV detectors based on β-Ga2O3 films with interdigital electrodes are presented. The sensors with interdigital electrodes have interelectrode spacing d = 5, 10, 30, and 50 μm. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::385936c7b027c53b12119d8938cdb3a5
https://doi.org/10.1002/pssb.202100341
https://doi.org/10.1002/pssb.202100341