Zobrazeno 1 - 10
of 52
pro vyhledávání: '"V. M. Danil'tsev"'
Publikováno v:
Semiconductors. 54:1147-1149
The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical e
Autor:
V.A. Ivanov, D. S. Smotrin, V.I. Shashkin, E. A. Koblov, O.I. Khrykin, L. D. Moldavskaya, P.A. Yunin, V. M. Danil’tsev, A.P. Kotkov, M.V. Revin
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 19:649-657
Autor:
Yu. N. Drozdov, Pavel A. Yunin, E. V. Demidov, A. B. Gritsenko, V. M. Danil’tsev, M. N. Drozdov, S. A. Korolev, P. I. Folomin, E. A. Surovegina
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:361-365
GaAs lattice “superdilation” caused by an introduced tellurium impurity, which is well known in publications, is experimentally studied. This phenomenon consists in the fact that the GaAs-lattice dilation can be more than 10 times greater than ex
Autor:
Yu. N. Drozdov, Pavel A. Yunin, V. I. Shashkin, V. M. Danil’tsev, E. A. Surovegina, E. V. Demidov, S. A. Kraev, M. N. Drozdov
Publikováno v:
Semiconductors. 50:1439-1442
The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentr
Autor:
E. V. Skorokhodov, A. I. Bobrov, Mikhail Shaleev, A. V. Novikov, Pavel A. Yunin, D. V. Yurasov, D. A. Pavlov, V. M. Danil’tsev
Publikováno v:
Semiconductors. 49:1415-1420
Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughne
Publikováno v:
Semiconductors. 47:1470-1474
The results of experimental studies of the effect of rapid thermal annealing on low-barrier diode structures used in the fabrication of microwave detectors for imaging arrays are indicative of an increase in the effective barrier height. Assuming tha
Publikováno v:
Journal of Structural Chemistry. 53:35-42
This work presents a study of oriented layers on GaAs(001) surface. It also demonstrates the role of X-ray diffraction in this research. Crystallographic images are proved to be useful for the explanation of various properties of crystal-based system
Publikováno v:
Semiconductors. 46:1392-1395
Calibration lines for the layer-by-layer analysis of the concentration of matrix elements in AlxGa1 − xAs layers are obtained using a TOF.SIMS-5 secondary-ion mass spectrometer. The alloy concentration for the set of test samples was independently
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:564-567
The recharging processes in an Al-nanocluster layer embedded in GaAs that occur as a result of altering the voltage applied to the structure have been experimentally studied. It has been shown that charging and recharging times may differ from each o
Autor:
N. V. Vostokov, V. I. Shashkin, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, E. V. Demidov, O. I. Khrykin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 76:221-224
The elementary composition and electron concentration in series of delta doped heterostructures AlXGa1 − XN/GaN with a two-dimensional electron channel are investigated. Separation of the electron channel and the doping Si admixture is shown by a c