Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. L. Shlyakhovyi"'
Publikováno v:
Semiconductors. 35:405-408
The results of electrical studies of CdTe crystals grown by the Bridgman-Stockbarger method and doped with Sb impurity to concentrations of 1017–3×1019 cm−3 were considered. An analysis of the temperature dependences of the Hall coefficient, the
Autor:
I. M. Yuriychuk, M. O. Kovalets, M. I. Kuchma, V. L. Shlyakhovyi, A. I. Savchuk, E. S. Nikonyuk, Z. I. Zakharuk
The temperature dependences (T = 80 - 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2d22609e6153bfa5bfb934845738ec
http://dspace.nbuv.gov.ua/handle/123456789/118666
http://dspace.nbuv.gov.ua/handle/123456789/118666
Autor:
I. M. Rarenko, V. N. Babentsov, S. V. Svechnikov, Z. K. Vlasenko, Z. I. Zakharuk, V. L. Shlyakhovyi, E. S. Nikonyuk, A. I. Vlasenko
Publikováno v:
Semiconductors. 31:869-871
Acceptor defects, which control conductivity and recombination in Cd1−x MnxTe (0⩽x⩽0.1), have been observed experimentally and investigated by electric and luminescence methods. The energy levels of the defects and the composition dependence of