Výsledky vyhledávání - "V. L. Shaposhnikov"

Akademický článek

ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS2

Autor: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J. -L. Lazzari

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 34-37 (2019)

Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon d

Externí odkaz: https://doaj.org/article/f1a54e39f98a41278368c304b8883e45

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Akademický článek

Atomic structure, fundamental electronic, optical and magnetic properties of low-dimensional structures of semiconductors

Autor: V. E. Borisenko, A. V. Krivosheeva, D. B. Migas, V. A. Pushkarchuk, A. B. Filonov, V. L. Shaposhnikov

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 73-84 (2019)

The results of theoretical modeling from the first principles of atomic structure and properties of promising low-dimensional structures from semiconductors, performed for the past five years at the Center of Nanoelectronics and Novel Materials of Be

Externí odkaz: https://doaj.org/article/36e644b01eed4b2fba30374480474ee3

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Akademický článek

BANDS STRUCTURE OF 3D and 2D Ca2Si

Autor: V. O. Bogorodz, V. L. Shaposhnikov, A. B. Filonov, B. S. Kolosnicin, D. B. Migas

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 23-26 (2019)

The results of theoretical research of band structures of Ca2Si bulk and Ca2Si thin films with surfaces (001), (010), (100) are presented. It`s found that Ca2Si bulk and thin film Ca2Si(010) and (100) are direct bandgap semiconductors while Ca2Si(001

Externí odkaz: https://doaj.org/article/c349608886cb490eb3afc26b743ea775

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Akademický článek

MoS2 BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

Autor: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 98-101 (2019)

The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap sem

Externí odkaz: https://doaj.org/article/08e5a2f324c7404b80b2110bf913f42e

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Akademický článek

The methodology of modeling of electronic properties of bulk semiconductor compounds

Autor: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 70-76 (2019)

An analysis of modern methods of modeling of the fundamental electronic properties of bulk semiconductors based on the electron density functional theory is performed and a technique taking into account the peculiarities of semiconductor compounds ha

Externí odkaz: https://doaj.org/article/92be332336664e8aa7485d4f8ca4d6bf

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Akademický článek

THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS

Autor: A. V. Krivosheeva, V. L. Shaposhnikov, A. Yu. Alexeev

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 76-81 (2019)

Computer modeling of the electronic structure of heterostructures made of individual layers of two-dimensional crystals of MoS2, WS2, WSe2 and MoSe2 is performed by means of first-principles methods. Two variants of the mutual arrangement of the laye

Externí odkaz: https://doaj.org/article/dbe89c4d17b24563bd72eac437d52449

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