Zobrazeno 1 - 9
of 9
pro vyhledávání: '"V. L. Levshunova"'
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:836-838
In this work, a new model of a change in the structure of the surface layer under light exposure is proposed. The model is the orientation of initially randomly distributed dislocation loops due to long-range action. The preferred direction is associ
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:351-355
The change in the atomic density of silicon near an edge dislocation is calculated and the relation between changes in the density of the substance and the speed of sound upon tension a sample is obtained. The waveguide effect upon the transmission o
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:262-265
A new mechanism for long range effect is proposed in this study. The decreased density region in the vicinity of dislocations or grain boundaries acts as a gradient waveguide for hypersound phonons generated in the sample oxide layer. As a result of
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:1165-1167
The variation in Kikuchi line widths upon the illumination of a silicon plate is studied with the help of an electronograph. This work attempts to observe the changes in the defect structure of the subsurface layer of silicon crystal due to the effec
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:276-278
A model of the excitation of the periodical stress pulses in the silicon-oxide system leading to generation of moving discrete breathers (local nonlinear wave disturbances of the atomic system) has been suggested. The latter can provide transportatio
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:515-517
The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:350-352
The concentration of point defects in silicon samples bombarded by Ar ions with an energy of 30 keV with a dose of 1016 cm−2 is investigated using Rutherford backscattering combined with ion channeling. It is revealed that there is a variation of p
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:239-241
This paper presents the results of the first experiments on the observation of the long-range effect by means of Rutherford backscattering/ion channeling spectroscopy under irradiation of a silicon crystal by visible light.
Publikováno v:
Technical Physics Letters. 28:612-614
Atomic force microscopy reveals changes in the surface micromorphology of ion-irradiated silicon crystals in the course of dynamic chemical polishing and selective etching to a depth significantly exceeding the range of 40-keV Ar+ ions.