Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. L. Krukov"'
Autor:
V. B. Shmagin, A. V. Murel, E. A. Surovegina, V. L. Krukov, V. I. Shashkin, S. S. Strelchenko
Publikováno v:
Semiconductors. 51:1485-1489
Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73198423fec29b0a8f25b51621295fcf
https://doi.org/10.1134/s1063782617110197
https://doi.org/10.1134/s1063782617110197
Autor:
Murel, A.1, Shmagin, V.1, Krukov, V.2, Strelchenko, S.2, Surovegina, E.1 suroveginaka@ipmras.ru, Shashkin, V.1
Publikováno v:
Semiconductors. Nov2017, Vol. 51 Issue 11, p1485-1489. 5p.
Autor:
Vostokov, N. V.1 (AUTHOR) vostokov@ipm.sci-nnov.ru, Daniltsev, V. M.1 (AUTHOR), Kraev, S. A.1 (AUTHOR), Krukov, V. L.2 (AUTHOR), Skorokhodov, E. V.1 (AUTHOR), Strelchenko, S. S.2 (AUTHOR), Shashkin, V. I.1 (AUTHOR)
Publikováno v:
Semiconductors. Oct2019, Vol. 53 Issue 10, p1279-1281. 3p.