Zobrazeno 1 - 10
of 25
pro vyhledávání: '"V. L. Borblik"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 2, Pp 195-198 (2017)
The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) has b
Externí odkaz:
https://doaj.org/article/b3af517b367b494085dfeb9411f4e70d
Publikováno v:
IEEE Sensors Journal. 21:4267-4271
The article presents investigation results concerning silicon p-n junction diodes with heightened diode base doping level up to a critical value for the insulator-metal transition. Accent is made on application of such the diodes as temperature senso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e0a1b3c5012ae4cbd2ff26d7ab6a1f
https://doi.org/10.1109/jsen.2020.3031344
https://doi.org/10.1109/jsen.2020.3031344
Autor:
V. L. Borblik
Publikováno v:
Springer Proceedings in Physics ISBN: 9783030519049
In this paper, theory of electrostatic properties of the nanowires containing a radial p-n or p-i-n junction is developed from the common positions. The p-n homo- and heterojunctions as well as p-i-n homojunction are considered in the depletion appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff30a503bbe31d56e0b02d4c5e345c4
https://doi.org/10.1007/978-3-030-51905-6_7
https://doi.org/10.1007/978-3-030-51905-6_7
Publikováno v:
Silicon. 11:1011-1015
Purpose of the work is to study a nature of the excess tunnel current in heavily doped silicon p − n junction diodes with lengthy compensation region in the p − n junction. In such the diodes, formation of the system of electron and hole “lakes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc9e9ff488d4f45e145d40763842560
https://doi.org/10.1007/s12633-018-9923-z
https://doi.org/10.1007/s12633-018-9923-z
Autor:
V. L. Borblik
Publikováno v:
Journal of Electronic Materials. 47:4022-4027
The electrostatics of a nanowire radial heterostructure p–n junction is considered theoretically. It is shown that when the radius of the core–shell interface decreases, depletion width of the core increases, but depletion width of the shell, on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec561186b79590be42b7d5f2e8212553
https://doi.org/10.1007/s11664-018-6288-4
https://doi.org/10.1007/s11664-018-6288-4
Autor:
V. L. Borblik
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 2, Pp 168-172 (2017)
Dependences of the depletion widths in a radial core-shell p-n diode on the radius of metallurgical boundary of the p-n junction have been studied theoretically in detail. While the depletion width of the core increases with decreasing the radius, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8546576ca83b09429a2f17d79f60bf15
http://journal-spqeo.org.ua/n2_2017/P168-172abstr.html
http://journal-spqeo.org.ua/n2_2017/P168-172abstr.html
Autor:
V. L. Borblik
Publikováno v:
Journal of Electronic Materials. 45:4117-4121
The influence of the circular geometry of a p-n junction built into a nanowire or a nanorod, on the radial diode current density is investigated. While the current density from the core to the shell proves to be larger than that in a planar diode at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20ec8e92dd9e3b7fefd93686413a12f4
https://doi.org/10.1007/s11664-016-4597-z
https://doi.org/10.1007/s11664-016-4597-z
Autor:
Viktor Strelchuk, Andrey Korchevoi, V. L. Borblik, Yurii Shwarts, Alexander Fonkich, Marina Shwarts, Andrii Nikolenko
Publikováno v:
Nanoscience and Nanoengineering. 4:22-30
The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7a004aa77f153144f64926089c433f
https://doi.org/10.13189/nn.2016.040103
https://doi.org/10.13189/nn.2016.040103
Autor:
V. L. Borblik
Publikováno v:
Solid-State Electronics. 114:171-173
Dependence of the depletion length in semiconductor quantum dot of spherical form on its radius is studied by means of solution of the Poisson equation in “depletion layer approximation”. It is shown that spherical form of the interface increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315b817870b04ec390b430f4d8f15924
https://doi.org/10.1016/j.sse.2015.09.015
https://doi.org/10.1016/j.sse.2015.09.015
Publikováno v:
Cryogenics. 50:417-420
Time-resolved measurements have been performed of periodic oscillations in the voltage drop across a silicon diode which is fed by stabilized direct current (the situation for temperature measurement) in the region of instability connected with low-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58187777a9ea9843d748a118afb820f
https://doi.org/10.1016/j.cryogenics.2010.04.002
https://doi.org/10.1016/j.cryogenics.2010.04.002