Zobrazeno 1 - 10
of 523
pro vyhledávání: '"V. Kueller"'
Autor:
Arne Knauer, Tim Wernicke, Frank Mehnke, Sven Einfeldt, Markus Weyers, Joachim Stellmach, Michael Kneissl, Tim Kolbe, M.-A. Rothe, V. Kueller
Publikováno v:
physica status solidi (a). 213:210-214
The effects of the aluminum content x and the magnesium doping concentration in the AlGaN:Mg electron blocking layer on the emission characteristics of ultraviolet light-emitting diodes has been investigated. The carrier injection in the light-emitti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a6b239086bbc3574eac1b3c6229c940
https://doi.org/10.1002/pssa.201532479
https://doi.org/10.1002/pssa.201532479
Autor:
Markus Weyers, Joerg Jeschke, Tim Wernicke, Martin Martens, V. Kueller, Arne Knauer, Michael Kneissl, Christian Kuhn, Christoph Reich, Ute Zeimer, Felix Krueger, Carsten Netzel
Publikováno v:
IEEE Photonics Technology Letters. 27:1969-1972
AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates exhibited high dislocation densities and high V-pit den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea35809cf34931f0bec4d8a0df94faab
https://doi.org/10.1109/lpt.2015.2448127
https://doi.org/10.1109/lpt.2015.2448127
In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs (Conference Presentation)
Publikováno v:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI.
UV-LEDs are of great interest for applications like disinfection, gas sensing, and phototherapy. The cost sensitive LEDs are commonly grown by MOVPE on transparent AlN/sapphire templates. The large thermal and lattice mismatch between AlN and sapphir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047df33b920ff455189f2a0a5914e748
https://doi.org/10.1117/12.2253867
https://doi.org/10.1117/12.2253867
Autor:
Moritz Brendel, Ute Zeimer, V. Kueller, Andrea Knigge, Markus Weyers, Frank Brunner, Arne Knauer, Markus Helbling, Sven Einfeldt
Publikováno v:
physica status solidi (a). 212:1005-1010
Al0.45Ga0.55N metal–semiconductor–metal photodetectors were grown by MOVPE on planar and on stripe patterned epitaxial laterally overgrown (ELO) AlN/sapphire templates. By comparing devices on different template types, the influence of the averag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65dcbbf24a20d91bd22a229b56fc0516
https://doi.org/10.1002/pssa.201431680
https://doi.org/10.1002/pssa.201431680
Autor:
Christian Kuhn, Markus Weyers, Carsten Hartmann, Chirstoph Reich, Tim Wernicke, A. Knauer, Juergen Wollweber, Carsten Netzel, Martin Martens, Jens Rass, Matthias Bickermann, Frank Mehnke, Michael Kneissl, V. Kueller
Publikováno v:
IEEE Photonics Technology Letters. 26:342-345
The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7de7bf7428f710ec80f0773ca28d42f2
https://doi.org/10.1109/lpt.2013.2293611
https://doi.org/10.1109/lpt.2013.2293611
Autor:
Sven Einfeldt, Marcus Weyers, Ute Zeimer, Moritz Brendel, V. Kueller, Arne Knauer, Frank Brunner, Andrea Knigge
Publikováno v:
physica status solidi c. 11:802-805
Solar-blind Schottky-type metal-semiconductor-metal (MSM) photodetectors (PDs) based on AlxGa1–xN absorber layers with x varying between 0.4 and 1 are investigated. The impact of the epitaxial lateral overgrowth (ELO) technique on stripe patterned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edcd0c4066bfc389d5ed3fcd61fdbd92
https://doi.org/10.1002/pssc.201300446
https://doi.org/10.1002/pssc.201300446
Publikováno v:
physica status solidi c. 11:377-380
The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally resolved cathodoluminescence, scanning electron and atomic for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71b93d8a22f7480a430e48e2acfcd90
https://doi.org/10.1002/pssc.201300415
https://doi.org/10.1002/pssc.201300415
Autor:
Ute Zeimer, Sven Einfeldt, Arne Knauer, Frank Brunner, Moritz Brendel, Markus Weyers, V. Kueller, Andrea Knigge
Publikováno v:
Journal of Electronic Materials. 43:833-837
Al0.4Ga0.6N metal–semiconductor–metal photodetectors on epitaxial laterally overgrown (ELO) AlN/sapphire templates show anisotropic device characteristics depending on the orientation of the electrode stripes with respect to the stripe pattern on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5056e792408a900e1c90facfef459321
https://doi.org/10.1007/s11664-013-2955-7
https://doi.org/10.1007/s11664-013-2955-7
Autor:
M. Nouf-Allehiani, S. Vespucci, R. M. Smith, A. Alasmari, Y. Gong, Yonghao Zhang, W. Avis, Carol Trager-Cowan, Frank Mehnke, Tim Wernicke, Tao Wang, David M. Thomson, Aimo Winkelmann, L. Jiu, Philip A. Shields, M. D. Smith, Benjamin Hourahine, Gunnar Kusch, V. Kueller, Christian Kuhn, Robert W. Martin, Lucia Spasevski, Johannes Enslin, S. Hagedorn, G. Naresh-Kumar, Paul R. Edwards, Sebastian Walde, S. Kraeusel, Michael Kneissl, Marcus Weyers, Roy L. Johnston, Peter J. Parbrook, Jochen Bruckbauer, Pierre-Marie Coulon, Elena Pascal, Arne Knauer
Publikováno v:
Photonics Research
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de63e87decea2c17bba84400892fe5d
https://doi.org/10.1364/prj.7.000b73
https://doi.org/10.1364/prj.7.000b73
Publikováno v:
Journal of Crystal Growth. 376:54-58
In-situ curvature measurements were employed to analyse stress generation and relaxation during epitaxial growth of undoped and Si-doped AlGaN layers on AlN/sapphire templates. While AlGaN films with a lower Al content exhibit a compressive strain du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a278bbc523207048ce78f41dde67eef5
https://doi.org/10.1016/j.jcrysgro.2013.04.023
https://doi.org/10.1016/j.jcrysgro.2013.04.023