Zobrazeno 1 - 10
of 95
pro vyhledávání: '"V. Kubilius"'
Autor:
Valentina Plausinaitiene, Algirdas Selskis, Z. Saltyte, Martynas Skapas, Nerija Zurauskiene, V. Kubilius, Birute Knasiene, Voitech Stankevic, Evaldas Naujalis, Milita Vagner, Rasuole Lukose, Skirmantas Kersulis, Karolis Motiejuitis
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 256-261 (2019)
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 256-261 (2019)
In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural
Precise composition control and cation nonstoichiometry in La-doped BaSnO3 thin films grown by MOCVD
Autor:
Adulfas Abrutis, Rimantas Raudonis, T. Murauskas, V. Kubilius, Valentina Plausinaitiene, Martynas Talaikis, Gediminas Niaura
Publikováno v:
Journal of Alloys and Compounds. 898:162843
La:BaSnO3 has recently emerged as an outstanding perovskite oxide material due to its high electron mobility. To-date, lower electron mobility in thin films compared to the single-crystal are discussed in terms of the presence of dislocations, nearly
Autor:
Remigijus Juskenas, Nerija Zurauskiene, Skirmantas Kersulis, Voitech Stankevic, Romualdas Navickas, Valentina Plausinaitiene, Martynas Skapas, V. Kubilius, Saulius Balevicius, Jonas Klimantavicius
Publikováno v:
Journal of Materials Science. 53:12996-13009
The results of fabrication of nanostructured La1−xSr x MnO3 films grown by pulsed injection metalorganic chemical vapour deposition technique onto special disordered glass-ceramics substrate are presented. Two groups of films were produced in order
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Autor:
L. Silimavicius, Adulfas Abrutis, Z. Saltyte, V. Kubilius, S. Kuprenaite, Valentina Plausinaitiene, T. Murauskas, A. Arkhangelskiy
Publikováno v:
Integrated Ferroelectrics. 173:128-139
Al-doped ZnO films were grown on different orientation sapphire substrates (sapphire-R, C, M, A) at 400–600 °C via the atmospheric pressure aerosol-assisted MOCVD technique. The influence of deposition temperature and orientation of sapphire subst
Autor:
T. Murauskas, Z. Saltyte, V. Kubilius, S. Kuprenaite, Adulfas Abrutis, Valentina Plausinaitiene
Publikováno v:
Thin Solid Films. 599:19-26
Epitaxial films of Al-doped ZnO were grown at 400 °C on sapphire-R substrates at atmospheric pressure via the aerosol-assisted MOCVD technique. The film microstructure, surface morphology, and electrical and optical properties were investigated in r
Autor:
V. Kubilius, Z. Saltyte, Evaldas Naujalis, Valentina Plausinaitiene, Sandra Stanionyte, Birute Knasiene, Milita Vagner, Martynas Talaikis, Gediminas Niaura, Nerija Zurauskiene, Skirmantas Kersulis, Karolis Motiejuitis, Rasuole Lukose
Publikováno v:
Surface and Coatings Technology. 385:125287
The novel La1-xSrx(Mn1-yCoy)zO3 (LSMCO) films were grown by Pulsed-Injection Metalorganic Chemical Vapor Deposition (PI-MOCVD) technique on different oxide substrates. The structural, transport and magnetic properties of the LSMCO films were investig
Publikováno v:
Thin Solid Films. 692:137575
Wide bandgap (~3 eV) perovskite transparent conductive oxide material exhibiting superior electric properties is highly desired in today's optoelectronics. Just recently La-doped barium stannate (LBSO) bulk n-type semiconductor with outstanding carri
Autor:
Z. Saltyte, Valentina Plausinaitiene, S. Kuprenaite, T. Murauskas, Adulfas Abrutis, V. Kubilius
Publikováno v:
Surface and Coatings Technology. 271:156-164
In-, Ga- and Al-doped ZnO films were grown via the aerosol-assisted MOCVD technique using the following air-stable metal-organic precursors: Zn(thd)2, In(thd)3, Al(thd)3 and Ga(acac)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, acac = acetylacetonat
Autor:
Z. Saltyte, L. Silimavicius, Adulfas Abrutis, T. Murauskas, Valentina Plausinaitiene, V. Kubilius
Publikováno v:
Thin Solid Films. 576:88-97
Hot-wire chemical vapour deposition (CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide films. Indium (In)-, gallium (Ga)-, and aluminium (Al)-doped ZnO films were deposited at 400 °C on sapphire-R, Si (100) and glass subst