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Publikováno v:
Microelectronic Engineering. 83:2458-2461
This study investigates the fluorocarbon based plasma etching (FBPE) of ultra low dielectric constant (ULK) carbon-doped oxide (CDO) films, which have a k value of 2.4. The influence of the presence of a thin fluorocarbon layer on the carbon concentr
Publikováno v:
Surface and Coatings Technology. 161:11-19
Samples of phosphorus silicate glass (PSG) layers were deposited in a class 100 clean room in two kinds of industrial type reactors: by plasma enhanced chemical vapour deposition (PECVD) and micro pressure chemical vapour deposition (μPCVD) at worki
Publikováno v:
The European Physical Journal B - Condensed Matter. 29:273-277
Substitutional impurity ions in crystals are known to displace off-center and to perform hindered rotations around the ideal lattice positions. The vibronic theory to describe both the off-center displacements and the hindered rotations by a single a
Publikováno v:
International Journal of Quantum Chemistry. 89:371-376
Off-center impurity ions in solids often perform rotations around their regular lattice sites. Unlike quasifree rotors with rotational line spectra subject to textbook attention in quantum mechanics, the off-center species are hindered rotors with sp
Publikováno v:
Diamond and Related Materials. 9:562-565
Carbon nitride thin films have been deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. The layers were analyzed by X-ray photoelectron spectroscopy. The synthesized layers ar
Publikováno v:
Surface and Coatings Technology. 125:313-316
The demand for hard and superhard coatings has inspired many investigators in their attempts to synthesise β-C 3 N 4 . CN x thin films were deposited on c-silicon substrates with simultaneous nitrogen ion bombardment. An electron beam was used for g
Publikováno v:
Applied Surface Science. 151:233-238
Carbon nitride thin films were deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. They were analysed by Raman and X-ray photoelectron spectroscopy. The formed amorphous layer
Carbon nitride films synthesized by electron beam evaporation of carbon and nitrogen ion bombardment
Publikováno v:
Vacuum. 52:501-504
Carbon nitride thin films deposited on Si(1 0 0) have been synthesized by electron beam evaporation of graphite in nitrogen atmosphere for various N2 pressures and at different substrate temperatures. The layers were analyzed by X-ray photoelectron s