Zobrazeno 1 - 10
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pro vyhledávání: '"V. Kazlauskiene"'
Akademický článek
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Publikováno v:
Journal of Environmental Management. 250:109469
Autor:
V. Venckute, Z. Kanepe, V. Kazlauskiene, Antonija Dindune, Tomas Šalkus, A. Kežionis, J. Ronis, J. Miškinis, A. Maneikis, Kuan-Zong Fung, Antanas Feliksas Orliukas
Publikováno v:
Lithuanian Journal of Physics. 54:106-113
Akademický článek
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Publikováno v:
Journal of Magnetism and Magnetic Materials. 316:e203-e206
We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of Zn 1 - x Co x O films on (1 1 0 2) sapphire substrates. The use of Zn(tmhd) 2 and Co(tmhd) 3 precursors produces high-quality films in which Co 2
Publikováno v:
Journal of Physics: Conference Series. 59:150-154
Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser
Autor:
A. Mazeikis, V. Kazlauskiene, R. Baubinas, J. Vaitkus, E. Gaubas, A. Zindulis, J. Miskinis, E. Zasinas, J. Sinius
Publikováno v:
Microelectronics Journal. 30:335-340
The thin layer of the II–VI and IV–VI compound growths on crystalline substrates by laser deposition was analyzed. The influence of substrate properties on crystallite formation was determined. The initial stages of the growth of CdSe on ZnSe as
Publikováno v:
Materials Research Bulletin. 33:711-716
PbS layer growth by laser ablation on slightly misoriented Si and NaCl substrates has been investigated. An analysis of the substrate atom core level XPS spectra dependence on layer growth indicated a “flat” layer growth on terrace-step surface.
Epitaxial layers of CdTe grown on GaAs by H2 transport VPE have been investigated. Excess carrier lifetime depth profiles have been examined by transient microwave absorption technique. The recombination and trapping lifetime depth profiles are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::8b2ca09a698fb843e6f6cc846218c543
https://hdl.handle.net/11587/370835
https://hdl.handle.net/11587/370835
Autor:
V. Kazlauskiene, E. Lindberg, J. Vaitkus, Mats Göthelid, Darius Kuciauskas, R. Baubinas, Mattias Hammar, J. Miskinis, Ulf O. Karlsson, M. Björqvist
Publikováno v:
Journal of Crystal Growth. 138:545-549
Ultrahigh vacuum-cleaved and as-grown surfaces of CdSe single crystals were investigated by scanning tunneling microscopy. The single crystals were grown by Reynolds-Green method. Striations and terrace-step structure have been found. The surface ato