Zobrazeno 1 - 10
of 23
pro vyhledávání: '"V. Kamienski"'
Autor:
Cor-Paul Bezemer, Arthur V. Kamienski
Publikováno v:
Empirical Software Engineering
The game development industry is growing, and training new developers in game development-specific abilities is essential to satisfying its need for skilled game developers. These developers require effective learning resources to acquire the informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71834865675fdaa34fd9ea0e9768aaac
https://doi.org/10.1007/s10664-021-10014-4
https://doi.org/10.1007/s10664-021-10014-4
Publikováno v:
MSR
Single-statement bugs (SStuBs) can have a severe impact on developer productivity. Despite usually being simple and not offering much of a challenge to fix, these bugs may still disturb a developer’s workflow and waste precious development time. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a9028fba5078923fb6c16dc70713f9
https://doi.org/10.1109/msr52588.2021.00066
https://doi.org/10.1109/msr52588.2021.00066
Publikováno v:
Anais do Brazilian Workshop on Social Network Analysis and Mining (BraSNAM).
Identificar pesquisadores com grande prestı́gio nas suas áreas acadêmicas é uma tarefa árdua. A maior dificuldade é a avaliação do prestı́gio de cada pesquisador na estrutura que o envolve. Neste trabalho apresentamos uma nova adaptação
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c3d6b87a09c2c2ce02ed07650900632
https://doi.org/10.5753/brasnam.2019.6559
https://doi.org/10.5753/brasnam.2019.6559
Autor:
E. Maayan, null Ran Dvir, J. Shor, null Yan Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E. Stain v. Kamienski, P. Haibach, D. Caspary, S. Riedel, R. Knofler
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac24fe9ec9eb279d21b7b31e6daa619
https://doi.org/10.1109/isscc.2002.992117
https://doi.org/10.1109/isscc.2002.992117
Autor:
N. Schulze, E.G. Stein, Thomas Mikolajick, S. Riedel, J. Wilier, Nicolas Nagel, K.-H. Kusters, Mark Isler, Christoph Ludwig, V. Kamienski
Publikováno v:
Symposium Non-Volatile Memory Technology 2005..
The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53561cb56d68e7bd23629cce6c35670
https://doi.org/10.1109/nvmt.2005.1541378
https://doi.org/10.1109/nvmt.2005.1541378
Autor:
M. Krause, J.-U. Sachse, Boaz Eitan, Stefano Parascandola, Ilan Bloom, J. Deppe, Thomas Mikolajick, S. Riedel, Ricardo Pablo Mikalo, E.S. v Kamienski, J.-M. Fischer, Christoph Kleint, Eli Lusky, A. Shapir, Josef Willer, Christoph Ludwig, K.-H. Kuesters, Mark Isler
Publikováno v:
Scopus-Elsevier
A novel NROM generation with a bit size of 0,043 /spl mu/m/sup 2//bit at a 110nm design rule is introduced. The concept features mainstream CMOS type cell devices in conjunction with a metal contact based virtual ground array architecture. The new te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd1b459211e35b5a345060b8afd2fd54
https://doi.org/10.1109/vlsit.2004.1345402
https://doi.org/10.1109/vlsit.2004.1345402
Autor:
Mueller, Torsten, Kleint, C., Fitz, C., Isler, M., Riedel, S., Sachse, J.-U., Olligs, D., Boubekeur, H., Heinrichsdorf, F., Polei, V., Pritchard, D., Verhoeven, M., Lattard, L., Markert, M., Schupke, C., Tippelt, B., Teichert, S., Reisdorf, R., Ludwig, C., Stein v. Kamienski, E. G.
Publikováno v:
MRS Online Proceedings Library; 2007, Vol. 997 Issue 1, p1-6, 6p
Autor:
Maayan, E., Ran Dvir, Shor, J., Yan Polansky, Sofer, Y., Bloom, I., Avni, D., Eitan, B., Cohen, Z., Meyassed, M., Alpern, Y., Palm, H., Stain v. Kamienski, E., Haibach, P., Caspary, D., Riedel, S., Knofler, R.
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315); 2002, p76-408, 333p
Publikováno v:
Flora oder Allgemeine Botanische Zeitung. 146:472-477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459afede0c9c5f3eadf8d6a7dcee75c6
https://doi.org/10.1016/s0367-1615(17)32531-4
https://doi.org/10.1016/s0367-1615(17)32531-4
Autor:
Matthias Markert, B. Tippelt, David Pritchard, Martin Verhoeven, Torsten Mueller, Ludovic Lattard, Mark Isler, C. Schupke, E.G. Stein v. Kamienski, R. Reisdorf, Christoph Kleint, Veronika Polei, F. Heinrichsdorf, J.-U. Sachse, Hocine Boubekeur, Dominik Olligs, Nicolas Nagel, S. Teichert, Clemens Fitz, Thomas Mikolajick, S. Riedel, Christoph Ludwig
Publikováno v:
Scopus-Elsevier
A 63nm Twin Flash memory cell with a size of 0.0225μm2 per 2 (or 4) bits is presented. To achieve small cell areas, a buried bit line and an aggressive gate length of 100 nm are the key features of this cell together with a minimum thermal budget pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0451d58c821d4377fedda076b94a8dcc
http://www.scopus.com/inward/record.url?eid=2-s2.0-38549083138&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-38549083138&partnerID=MN8TOARS
