Zobrazeno 1 - 10
of 599
pro vyhledávání: '"V. Kafka"'
Autor:
J. Jirsa, J. Gecnuk, Z. Janoska, J. Jakovenko, V. Kafka, M. Marcisovsky, M. Marcisovska, P. Stanek, L. Tomasek, P. Vancura
Publikováno v:
Journal of Instrumentation. 18:C02033
Precise physical models of sensors are essential for developing high precision pixelated detectors. Advanced technologies allowed pixel electronics to be integrated in tens of micrometers pixel pitch. Such fine pixelated detectors suffer from charge
Autor:
P. Vančura, J. Gečnuk, Z. Janoška, J. Jirsa, O. Korchak, A. Kostina, V. Kafka, D. Lednický, M. Marčišovská, M. Marčišovský, P. Švihra, L. Tomášek, P. Staněk
Publikováno v:
Journal of Instrumentation. 18:C01002
The SpacePix2 monolithic active pixel sensor (MAPS) is a novel ASIC for space radiation monitoring designed in a 180 nm SOI CMOS technology. The active sensor area is 3.84 × 3.84 mm2, pixel matrix is arranged as a 64 × 64 array with 60 µm pitch. T
Autor:
J. Jirsa, J. Gecnuk, M. Havranek, Z. Janoska, M. Jansky, V. Kafka, O. Korchak, A. Kostina, D. Lednicky, M. Marcisovska, M. Marcisovsky, P. Stanek, L. Tomasek, P. Vancura
Publikováno v:
Journal of Instrumentation. 18:C01055
A new class of photon-counting pixel detectors allows for capturing of an image in several photon energy bins in one shot. A decreased pixel pitch and an increased number of energy bins are needed to enhance the spatial and spectral resolution of the
Autor:
Vojtech Svoboda, Jakub Urban, Vladimir Weinzettl, Pavel Vancura, Ondrej Ficker, Eva Macusova, M. Marcisovsky, Miroslav Havranek, Vladimír Linhart, J. Cerovsky, L. Tomasek, Z. Janoska, A. Casolari, Peter Svihra, Pravesh Dhyani, M. Farnik, Jozef Varju, Vaclav Vrba, M. Marcisovska, M. Hejtmanek, G. Neue, V. Kafka, David Bren, Lukas Novotny, Jan Mlynar, Petr Kulhánek
Publikováno v:
Fusion Engineering and Design. 146:316-319
A novel application of strip and pixel silicon radiation detectors for study and characterization of run-away electron events in tokamaks is presented. Main goal was to monitor runaway electrons both directly and indirectly. The strip detector was pl
Autor:
P. Vančura, J. Gečnuk, J. Jakovenko, Z. Janoška, J. Jirsa, V. Kafka, O. Korchak, A. Kostina, D. Lednický, M. Marčišovská, M. Marčišovský, L. Tomášek
Publikováno v:
Journal of Instrumentation. 17:T05016
This paper proposes a low power 10-bit asynchronous fully-differential column analog to digital converter (ADC) with successive approximation (SAR) and charge redistribution in a 180 nm SoI technology. The ADC is designed for use in Spacepix-2 monoli
Autor:
D. Dudas, V. Kafka, M. Marcisovsky, G. Neue, M. Marcisovska, P. Prusa, I. Koniarova, M. Semmler
Publikováno v:
Journal of Instrumentation. 16:P12007
Hybrid pixel detectors (HPD) are nowadays well known and widely used in fundamental research, e.g. in high energy physics experiments. Over the last decade, segmented semiconductor detectors have also found use in medicine. The total doses received b
Akademický článek
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Autor:
M. Garcia-Sciveres, R. Gaglione, P. Breugnon, Fabian Hügging, R. Beccherle, Fabio Morsani, Steven Bell, Stefano Bonaldo, D. Dzahini, Duccio Abbaneo, Luca Pacher, O. Le Dortz, Ta-Wei Wang, Mohsine Menouni, Guido Magazzu, M. Vogt, Francesco Crescioli, T. Benka, G. Neue, M. Da Rocha Rolo, E. Conti, F. Loddo, L. M. Jara Casas, Sally Seidel, Alexandre Rozanov, V. Gromov, G. Marzocca, Norbert Wermes, Fabrizio Palla, Tom Zimmerman, Valentino Liberali, M. Standke, Angelo Rivetti, Pisana Placidi, Mauro Menichelli, V. Kafka, F. De Canio, A. Paterno, Simone Gerardin, Z. Janoska, A. Krieger, V. Wallangen, Gianluca Traversi, Ennio Monteil, Y. Dieter, Alessandro Paccagnella, Alberto Stabile, Dario Gnani, B. Van Eijk, Serena Mattiazzo, Farah Fahim, Marco Bomben, D. Vogrig, Marta Bagatin, B. Nachman, Marlon Barbero, C. Renteira, S. Godiot, E. M. S. Jimenez, G. Marchiori, T. Liu, P. Pangaud, Luca Frontini, D. Gajanana, F. E. Rarbi, Scott Thomas, M. Karagounis, Hans Krüger, P. Rymaszewski, K. Papadopoulou, Tomasz Hemperek, Richard B. Lipton, Nicola Bacchetta, M.L. Prydderch, A. Andreazza, S. Poulios, Cristoforo Marzocca, R. Kluit, Konstantin Androsov, David-leon Pohl, Valerio Re, K. Moustakas, Sandeep Miryala, A. Vitkovskiy, Timon Heim, G. Calderini, F. Licciulli, Jesper Roy Christiansen, R. Carney, G. M. Bilei, M. Minuti, D. Fougeron, Lodovico Ratti, G. Deptuch, F. R. Palomo, G. De Robertis, G. Dellacasa, Luigi Gaioni, M. Daas, Martin Hoeferkamp, E. Lopez-Morillo, Massimo Manghisoni, G. Mazza, A. Stiller, S. Orfanelli, S. Marconi, Ivan Vila, M. Marcisovsky, C. Vacchi, E. Riceputi, Vaclav Vrba, Natale Demaria, L. Tomasek, D. C. Christian, J. Hoff, Fernando Muñoz, Dario Bisello, Miroslav Havranek
Publikováno v:
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), Nov 2018, Sydney, France. pp.8824486, ⟨10.1109/NSSMIC.2018.8824486⟩
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), Nov 2018, Sydney, France. pp.8824486, ⟨10.1109/NSSMIC.2018.8824486⟩
International audience; The RD53A large scale pixel demonstrator chip has been developed in 65 nm CMOS technology by the RD53 collaboration, in order to face the unprecedented design requirements of the pixel 2 phase upgrades of the CMS and ATLAS exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e3f3ef574c864f808decbac25c1bacc
https://hal.science/hal-02530634
https://hal.science/hal-02530634
Autor:
T. Benka, Petr Suchanek, Matej Vaculciak, V. Kafka, G. Neue, Vladimir A. Skuratov, Anezka Kabatova, Miroslav Finger, Vaclav Vrba, Michal Marcisovsky, Jiri Popule, Pavel Vancura, Semen Mitrofanov, M. Marcisovska, M. Hejtmanek, Miroslav Havranek, Z. Janoska, L. Tomasek, Peter Svihra
Publikováno v:
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC).
This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit
Autor:
J. Cerovsky, Z. Janoska, S. Kulkov, V. Svoboda, G. Neue, M. Marcisovska, Ondrej Ficker, M. Hejtmanek, Vaclav Vrba, Miroslav Havranek, L. Tomasek, M. Tunkl, Peter Svihra, V. Kafka, Michal Marcisovsky, Lukas Novotny, P. Dhyani
Publikováno v:
Journal of Instrumentation. 15:C07015-C07015